Materials for high-temperature thermoelectric conversion

High boron materials of high efficiency for thermoelectric power generation and capable of prolonged operation at temperatures over 1200 C are discussed. Background theoretical studies indicated that the low carrier mobility of materials with beta boron and related structures is probably associated with the high density of traps. Experimental work was mainly concerned with silicon borides in view of promising data from European laboratories. A systematic study using structure determination and lattice constant measurements failed to confirm the existence of an SiBn phase. Only SiB6 and a solid solution of silicon in beta boron with a maximum solid solubility of 5.5-6 at % at 1650 C were found

Growth and evaluation of AgGaS2 and AgGaSe2 for infrared nonlinear applications

The crystal growth technology for the two chalcopyrite compounds AgGaS2 and AgGaSe2 was studied. These two materials demonstrated their promise as important nonlinear crystals for infrared applications ten years ago. However, at the time, a number of various growth related problems such as cracking, twinning and the occurrence of optical scattering centers made it difficult to obtain high quality specimens in sizes exceeding 1 cm. Using seeding and precision-tapered fused quartz growth ampoules, a Bridgman/Stockbarger growth technology was developed to grow crack and twin-free boules in increasingly larger dimensions with an ultimate goal of 4 cm crystals harvested obliquely from c-axis boules. The post-growth heat treatment procedures were studied to understand the solid state chemical reactions and to avoid crystal damage which frequently occurs during these annealing procedures

Growth of new materials for solid state laser applications. The growth of ZnGeP2 by the vertical Bridgman method

This is the final technical report on the cooperative NASA program 'Growth of New Materials for Solid State Laser Applications,' covering the period from 9-1-86 through 3-31-91. The first two and one half years of the program, from 9-1-86 through 3-31-89, was devoted to the development of new eye-safe laser sources. Single crystal fibers of rare earth doped and co-doped YAG were grown by the laser-heated pedestal growth method, characterized for their structural properties and supplied to NASA/Langley for spectroscopic evaluation. From 4-1-89 though 3-31-91, research focused on the growth of zinc germanium phosphide for nonlinear optical applications in the IR. The vertical Bridgman growth process was evaluated as a means to achieve better control over the short wavelength optical absorption in this material that adversely affects 2 micron-pumped optical parametric oscillators

Direct observation of interface instability during crystal growth

The general aim of this investigation was to study interface stability and solute segregation phenomena during crystallization of a model system. Emphasis was to be placed on direct observational studies partly because this offered the possibility at a later stage of performing related experiments under substantially convection-free conditions in the space shuttle. The major achievements described in this report are: (1) the development of a new model system for fundamental studies of crystal growth from the melt and the measurement of a range of material parameters necessary for comparison of experiment with theory. (2) The introduction of a new method of measuring segregation coefficient using absorption of a laser beam by the liquid phase. (3) The comparison of segregation in crystals grown by gradient freezing and by pulling from the melt. (4) The introduction into the theory of solute segregation of an interface field term and comparison with experiment. (5) The introduction of the interface field term into the theories of constitutional supercooling and morphological stability and assessment of its importance

Growth and evaluation of AgGaS2 and AgGaSe2 for infrared nonlinear applications

Significant advances were made in the growth technology of silver thiogallate (AgGaS2) and silver selenogallate (AgGaSe2). High efficiency harmonic generation of carbon dioxide laser radiation and tunable infrared parametric oscillation were demonstrated using these materials. Nonliner frequency conversion in the infrared was limited by the optical properties and the size of the available nonlinear materials. The development of these materials has reduced some of the limitations and generated wide interest. The continued development and application of AgGaS2 and AgGaSe2 now appears assured

Four New BL Lac Surveys: Sampling New Populations

The advent of large area deep radio and X-ray surveys is leading to the creation of many new BL Lac samples. In particular, the ROSAT All-Sky, Green Bank and FIRST surveys are proving to be rich sources of new BL Lacs. We will discuss the methods used in four independent BL Lac searches based on these surveys. Comparison of the broadband spectral energy distributions of these BL Lacs with those of previously known objects clearly points to the existence of a large previously unrecognized population of objects with characteristics intermediate between those exhibited by Low and High energy peaked BL Lacs.Comment: 4 pages, 3 postscript figures, To be published in the Proceedings of the conference "BL Lac Phenomenon" held in Turku, Finland, June 22-26, 199

Probing grain boundaries in ceramic scintillators using x-ray radioluminescence microscopy

X-ray radioluminescence microscopy (XRLM), a novel fluorescence microscopy technique under focused x-ray excitation, was used to characterize micro-scale luminescence of Eu:Y2O3 and Ce:YAG transparent ceramics and bicrystals. The diffusion length of a known semiconductor measured by XRLM was found to be in agreement with previously measured values, illustrating its use for characterizing charge carrier transport. Emission intensity was found to drop at the boundaries in both Eu:Y2O3 and Ce:YAG ceramics and bicrystals. The depletion in emission at grain boundaries was ultimately found to be related to charge carrier depletion (through either deep trapping or non-radiative recombination). A charge carrier diffusion model was used to understand the effect of grain boundaries on charge carrier transport in these scintillators. The diffusion model was found to accurately predict the spatial distribution of emission in a Ce:YAG single-crystal as a function of x-ray excitation energy. Structural and chemical characterization of grain boundaries in an Eu:Y2O3 ceramic using transmission electron microscopy and secondary ion mass spectrometry mapping showed an ordered boundary region and no detectable segregation of impurities or Eu, justifying the use of an abrupt boundary condition to determine boundary recombination velocities in these materials. The boundary recombination velocities were then used to show that, for ceramics with grain sizes \u3e similar to 20 mu m, there would be a minimal effect from the detected charge carrier depletion at grain boundaries on their bulk x-ray radioluminescence intensity. Ultimately, this study illustrates how this new XRLM technique can be used to measure charge carrier diffusion properties and how it may be coupled with microstructural and micro-scale chemical analyses to fully investigate the effect of grain boundaries on scintillator properties

Laser Scattering Tomography for the Study of Defects in Protein Crystals

The goal of this research is to explore the application of the non-destructive technique of Laser Scattering Tomography (LST) to study the defects in protein crystals and relate them to the x-ray diffraction performance of the crystals. LST has been used successfully for the study of defects in inorganic crystals and. in the case of lysozyme, for protein crystals