P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required

Growth of single-crystal gallium nitride

Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces

Vapor Phase Growth Technique and System for Several III-V Compound Semiconductors Interim Scientific Report

Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor material

Vapor phase growth technique and system for several 3-5 compound semiconductors Quarterly technical report

Single vapor phase growth system for preparing semiconductor material

Enacted task design: tasks as written in the classroom

This paper presents and describes the construct of enacted task design, which considers the way tasks are “written” (designed) by teachers. Two enactments by different teachers based on the same written algebra task were analyzed and compared using the math story framework (Dietiker, 2015). Variations in these stories highlight four dimensions of the teacher’s design work

On the computation of minimal polynomials

LetK be a field and letf andg be non-constant elements ofK[T]. Assume thatgcd(degfdeg g) is not divisible by the characteristic ofK. This paper describes an algorithm to compute the polynomialp(X, Y) of minimal degree such thatp(f, g) = 0. Using ideas needed to justify the algorithm, a new proof is given of the fact that ifK[f, g]= K[T], then either degg dividesdeg f or deg f divides degg

Explicit Generators of the Invariants of Finite Groups

AbstractLetRdenote a commutative (and associative) ring with 1 and letAdenote a finitely generated commutativeR-algebra. LetGdenote a finite group ofR-algebra automorphisms ofA. In the case thatRis a field of characteristic 0, Noether constructed a finite set ofR-algebra generators of the invariants ofG. This paper proves that the same construction produces a set of generators of the invariants ofGwhen |G|! is invertible inR. Generators of the invariants ofGare also explicitly described in the case thatGis solvable and |G| is invertible inR

Quenched Hadron Spectrum and Decay Constants on the lattice

In this talk we present the results obtained from a study of ${\cal O}(2000)$ (quenched) lattice configurations from the APE collaboration, at $6.0\le\beta\le 6.4$, using both the Wilson and the SW-Clover fermion action. We determine the light hadronic spectrum and the meson decay constants. For the light-light systems we find an agreement with the experimental data of $\sim 5$ for mesonic masses and $\sim 10$ for baryonic masses and pseudoscalar decay constants; a larger deviation is present for the vector decay constants. For the heavy-light decay constants we find $f_{D_s}=237 \pm 16 MeV, f_{D} = 221 \pm 17 MeV (f_{D_s}/f_D=1.07(4)), f_{B_s} = 205 \pm 35 MeV, f_{B} = 180 \pm 32 MeV (f_{B_s}/f_B=1.14(8))$, in good agreement with previous estimates.Comment: 8 pages, latex, Talk given at XXV ITEP Winter School of Physics, Moscow - Russia, 18-27 Feb 199

Investigation of the free flow electrophoretic process

The effects of gravity on the free flow electrophoretic process was demonstrated. The free flow electrophoresis chamber used to demonstrate the effects of gravity on the process was of a proprietary design. This chamber was 120 cm long, 16 cm wide, and 0.15 cm thick. Flow in this chamber was in the upward direction and exited through 197 outlets at the top of the chamber. During electrophoresis a stream of sample was injected into the flow near the bottom of the chamber and an electrical field was applied across the width of the chamber. The field caused a lateral force on particles in the sample proportional to the inherent change of the particle and the electric field strength. Particle lateral velocity was then dependent on the force due to viscous drag which was proportional to particle size and particle shape dependent