1 research outputs found
Origin of Indirect Optical Transitions in Few-Layer MoS<sub>2</sub>, WS<sub>2</sub>, and WSe<sub>2</sub>
It has been well-established that
single layer MX<sub>2</sub> (M
= Mo, W and X = S, Se) are direct gap semiconductors with band edges
coinciding at the K point in contrast to their indirect gap multilayer
counterparts. In few-layer MX<sub>2</sub>, there are two valleys along
the Γ–K line with similar energy. There is little understanding
on which of the two valleys forms the conduction band minimum (CBM)
in this thickness regime. We investigate the conduction band valley
structure in few-layer MX<sub>2</sub> by examining the temperature-dependent
shift of indirect exciton photoluminescence peak. Highly anisotropic
thermal expansion of the lattice and the corresponding evolution of
the band structure result in a distinct peak shift for indirect transitions
involving the K and Λ (midpoint along Γ-K) valleys. We
identify the origin of the indirect emission and concurrently determine
the relative energy of these valleys