Explanation of normal state in-plane resistivity of optimised doped La-Sr-CuO superconductors

110-118<span style="font-size: 16.0pt;mso-bidi-font-size:11.0pt;font-family:Arial;color:black">We analyse the temperature dependent behavior of the normal state in-plane resistivity of optimally doped La-Sr-CuO system within the framework of Fermi liquid description. An effective two-dimensional dynamic interaction potential is <span style="font-size:16.0pt;mso-bidi-font-size:11.0pt;font-family:HiddenHorzOCR; mso-hansi-font-family:Arial;mso-bidi-font-family:HiddenHorzOCR;color:black">setup which incorporates the screening of holes as carriers and by plasmons. The system is treated as an ionic solid containing layers of holes as carriers and a model dielectric function is setup which fulfills the appropriate sum rules on electronic and ionic polarizabilities. The coupling strength linking hole as carriers to screened phonons is derived from the residue at the pole of interaction potential. The inelastic scattering rate due to the hole-screened phonon interaction is worked out and till Drude expression is used to <span style="font-size:16.0pt;mso-bidi-font-size:11.0pt; font-family:Arial;color:black">estimate the temperature dependent resistivity. Zero temperature scattering rate is deduced from upper critical field He2(O) and the screened plasma frequency, together with scattering role arc used to obtain zero temperature resistivity p(0). The implications of the above,analysis are discussed<span style="font-size:12.5pt;mso-bidi-font-size:7.5pt; font-family:Arial;color:black">.<span style="font-size:16.0pt; mso-bidi-font-size:11.0pt;color:black"> </span