Population level survival of patients with chronic myelocytic leukemia in Germany compared to the US in the early 21st century

INTRODUCTION: The advent of tyrosine kinase inhibitors has produced 5-year survival of 90 + % for chronic myelocytic leukemia (CML) patients in clinical trials. However, population level survival has been lower, especially in older patients. Here, we examine survival of patients with CML in Germany and compare it to survival of patients in the United States (US). METHODS: Data were extracted from the Surveillance, Epidemiology, and End Results database in the US and 11 cancer registries in Germany. Patients 15–69 years old diagnosed with CML were included in the analysis. Period analysis for 2002–2006 was used to provide the most up-to-date possible estimates of five-year relative survival. RESULTS: Five-year relative survival was 68.7% overall in Germany and 72.7% in the US. Survival was higher in the US for all age groups except for ages 15–39 years, but the difference was only statistically significant for ages 50–59 years (at 67.5% vs 77.7% in Germany and the US, respectively). Survival decreased with age, ranging from 83.1% and 81.9%, respectively, in Germany and the US for patients 15–39 years old to 54.2% and 54.5%, respectively, in patients 65–69 years old. Survival increased between 2002 and 2006 by 12.0% points in Germany and 17.1% points in the US. CONCLUSIONS: Five-year survival estimates were higher in the US than in Germany overall, but the difference was only significant for ages 50–59 years. Survival did not equal that seen in clinical trials for either country, but strong improvement in survival was seen between 2002 and 2006

Serial nonvolatile 1024 bit MNOS memory

The characteristics and operation of a nonvolatile MNOS sequential memory designed and built by Sandia National Laboratories for DOD are described. First, a general description and block diagram are presented, followed by the power, voltage, clock and address requirements, and then operating descriptions for the control and data signals. 1 figure, 1 table

Effect of diffusion on the photoconductivity of thin films

The equations governing time dependent and steady state photoconductivity are solved analytically for some approxiations and numerically in exact form. The diffusion terms are shown to be important especially in thin films. Some data of Farmer and Lee on photoconductivity in MOS structures is reinterpreted with losses due to diffusion to the contacts included

High-speed nonvolatile CMOS/MNOS RAM

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si/sub 3/N/sub 4/ insulator deposited at 750/sup 0/C. Read cycle times less than 350 ns and write cycle times of 1 ..mu..s are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected