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73 research outputs found

Poly-elektronica zakboekje /

Author: van Overstraeten R. J.,
Publication venue: Arnhem : Koninklijke PBNA,
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Accurate Theoretical Arsenic Diffusion Profiles in Silicon from Processing Data

Author: R. J. Van Overstraeten
R. K. Jain
Publication venue: 'The Electrochemical Society'
Publication date
Field of study

Crossref

Sintering Mechanisms in Base Metal Conductors

Author: E. Brauns
J. Degraeuwe
J. Roos
R. Govaerts
R. Van Overstraeten
Publication venue: 'Hindawi Limited'
Publication date: 01/01/1980
Field of study

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Influence of the charge of surface states on the characteristics of mis transistors made of p-type indium antimonide

Author: C. T. Sah
G. D. Lapin
J. R. Schrieffer
O. V. Kosogov
O. V. Kosogov
R. J. Overstraeten Van
R. J. Overstraeten Van
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Crossref

TECHNICAL GOALS AND FINANCIAL MEANS FOR PV DEVELOPMENT

Author: J. NIJS
Maycock P.
R. MERTENS
R. VAN OVERSTRAETEN
W. PALZ
Publication venue: 'Informa UK Limited'
Publication date
Field of study

Crossref

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

Author: C. Claeys
G. Declerck
H. Bender
J. Van Landuyt
R. Van Overstraeten
S. Amelinckx
Publication venue: EDP Sciences
Publication date: 01/01/1983
Field of study

Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élevée en oxygène, sont étudiés par microscopie électronique à haute tension et à haute résolution.The defects formed during a low temperature treatment of Czochralski silicon with a high interstitial oxygen content are studied by both high voltage and high resolution electron microscopy

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