Self-Mode-Locking of a Semiconductor Laser Using Positive Feedback

A new mode-locking technique, self-mode-locking, is described which uses the detected optical pulses from the mode-locked laser as the active driving source. This technique forms narrow-width mode-locked optical pulses at low repetition rates without the use of a microwave synthesize

Suppression of Multiple Pulse Formation in External-Cavity Mode-Locked Semiconductor Lasers Using Intrawaveguide Saturable Absorbers

Imperfect antireflection coatings in external-cavity mode-locked semiconductor lasers can cause multiple output pulse generation. The incorporation of an intrawaveguide saturable absorber segment into the laser suppresses this problem. Single pulse outputs of less than 2.8 ps and 0.7 pJ of energy are obtained using such devices with both quantum well and bulk active region

Repetition Frequency Stabilisation of Passively Mode-Locked Semiconductor Lasers

The repetition frequency of an external cavity mode-locked GaAs semiconductor diode laser has been stabilized by voltage controlled electrical feedback. The phase noise has been reduced by 40dB at 1 kHz offset from the carrier and timing jitter reduced from more than 30ps to 4ps. This technique can be used to stabilize millimetre-wave mode-locked lasers

Microwave and Millimeter Wave Signal Generation Using Mode-Locked Semiconductor Lasers with Intra-Waveguide Saturable Absorbers

Microwave and millimeter wave signals can be generated using mode-locked semiconductor lasers with intra-waveguide saturable absorbers. Monolithic and external cavity devices optimized for electrical and optical signal generation are discussed along with measurements of amplitude noise, phase noise, output power, and repetition rate tunability

Ultrafast Dynamics in Field-Enhanced Saturate Absorbers

Absorption recovery dynamics of GaAs/AlGaAs field-enhanced waveguide saturable absorbers are studied by pump-probe differential transmission measurements. We compare the response of bulk and single quantum well absorbers at different reverse bias levels and pump powers, and find an ultrafast transient in the response, followed by a slower rise before the final recovery. The absorption fully recovers after a few picoseconds, which is an important result for mode-locked lasers