Evaluating the Impact of Nature-Based Solutions: A Handbook for Practitioners

The Handbook aims to provide decision-makers with a comprehensive NBS impact assessment framework, and a robust set of indicators and methodologies to assess impacts of nature-based solutions across 12 societal challenge areas: Climate Resilience; Water Management; Natural and Climate Hazards; Green Space Management; Biodiversity; Air Quality; Place Regeneration; Knowledge and Social Capacity Building for Sustainable Urban Transformation; Participatory Planning and Governance; Social Justice and Social Cohesion; Health and Well-being; New Economic Opportunities and Green Jobs. Indicators have been developed collaboratively by representatives of 17 individual EU-funded NBS projects and collaborating institutions such as the EEA and JRC, as part of the European Taskforce for NBS Impact Assessment, with the four-fold objective of: serving as a reference for relevant EU policies and activities; orient urban practitioners in developing robust impact evaluation frameworks for nature-based solutions at different scales; expand upon the pioneering work of the EKLIPSE framework by providing a comprehensive set of indicators and methodologies; and build the European evidence base regarding NBS impacts. They reflect the state of the art in current scientific research on impacts of nature-based solutions and valid and standardized methods of assessment, as well as the state of play in urban implementation of evaluation frameworks

Sharp Line Emission Spectra from GaAs FET Like Structures

Magneto-optical analysis of prominent photoluminescence lines from GaAs FET structures has been performed. Fifteen samples were investigated. Each consisted of a sulfur doped active layer on a high resistivity buffer layer (both epitaxially grown films) on a chromium doped GaAs substrate. The active layers were generally 2μm thick or less, except for two thicker layers (4 and 5μm) grown especially for this study. Buffer layer thicknesses ranged from 1.5 to 26μm. A model based on carrier diffusion through the active layer has been used to interpret the spectra as originating from the active-buffer interface region. All spectra contain strong-evidence of two donorbound exciton complexes associated with sulfur (1.51417eV) and silicon (1.51412eV). Other sharp spectral features included up to six lines associated with more complicated complexes. Linear Zeeman and quadratic diamagnetic behavior of the lines in applied magnetic fields are discussed

Sharp Line Emission Spectra from GaAs FET Like Structures

Magneto-optical analysis of prominent photoluminescence lines from GaAs FET structures has been performed. Fifteen samples were investigated. Each consisted of a sulfur doped active layer on a high resistivity buffer layer (both epitaxially grown films) on a chromium doped GaAs substrate. The active layers were generally 2μm thick or less, except for two thicker layers (4 and 5μm) grown especially for this study. Buffer layer thicknesses ranged from 1.5 to 26μm. A model based on carrier diffusion through the active layer has been used to interpret the spectra as originating from the active-buffer interface region. All spectra contain strong-evidence of two donorbound exciton complexes associated with sulfur (1.51417eV) and silicon (1.51412eV). Other sharp spectral features included up to six lines associated with more complicated complexes. Linear Zeeman and quadratic diamagnetic behavior of the lines in applied magnetic fields are discussed