1,831 research outputs found

    Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

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    Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained

    Mode stabilized terrace InGaAsP lasers on semi-insulating InP

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    Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices

    Phase-locked InGaAsP laser array with diffraction coupling

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    A phase-locked array of InGaAsP lasers has been fabricated for the first time. This 50-µm-wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250-µm cavity length. Smooth single-lobe far-field patterns with beam divergence as narrow as 3° have been achieved
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