Caracterização química de quatro espécies de eucalipto para produção de bioetanol.

Resumo

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Effect of Plasma Flux Composition on the Nitriding Rate of Stainless Steel

The total ion flux and nitriding rate for stainless steel specimens exposed to a modulated electron beam generated argon-nitrogen plasma were measured as a function of distance from the electron beam axis. The total ion flux decreased linearly with distance, but the nitriding rate increased under certain conditions, contrary to other ion flux/nitriding rate comparisons published in the literature. Variation in ion flux composition with distance was explored with a mass spectrometer and energy analyzer as a possible explanation for the anomalous nitriding rate response to ion flux magnitude. A transition in ion flux composition from mostly N2 1 to predominantly N1 ions with increasing distance was observed. Significant differences in molecular and atomic nitrogen ion energy distributions at a negatively biased electrode were also measured. An explanation for nitriding rate dependence based on flux composition and magnitude is proposed

B–N/B–H Transborylation: borane-catalysed nitrile hydroboration

The reduction of nitriles to primary amines is a useful transformation in organic synthesis, however, it often relies upon stoichiometric reagents or transition-metal catalysis. Herein, a borane-catalysed hydroboration of nitriles to give primary amines is reported. Good yields (48–95%) and chemoselectivity (e.g., ester, nitro, sulfone) were observed. DFT calculations and mechanistic studies support the proposal of a double B–N/B–H transborylation mechanism

Properties of a vacuum ultraviolet laser created plasma sheet for a microwave reflector

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

The nature of faint Spitzer-selected dust-obscured galaxies

We use deep far-IR, submillimeter, radio, and X-ray imaging and mid-IR spectroscopy to explore the nature of a sample of Spitzer-selected dust-obscured galaxies (DOGs) in GOODS-N. A sample of 79 galaxies satisfy the criteria R-[24]>14 (Vega) down to S24>100 μJy (median flux density S24=180 μJy). Twelve of these galaxies have IRS spectra available, which we use to measure redshifts and classify these objects as being dominated by star formation or active galactic nucleus (AGN) activity in the mid-IR. The IRS spectra and Spitzer photometric redshifts confirm that the DOGs lie in a tight redshift distribution around z~2. Based on mid-IR colors, 80% of DOGs are likely dominated by star formation; the stacked X-ray emission from this subsample of DOGs is also consistent with star formation. Since only a small number of DOGs are individually detected at far-IR and submillimeter wavelengths, we use a stacking analysis to determine the average flux from these objects and plot a composite IR (8-1000 μm) spectral energy distribution (SED). The average luminosity of these star-forming DOGs is LIR~1×1012 Lsolar. We compare the average star-forming DOG to the average bright (S850>5 mJy) submillimeter galaxy (SMG); the S24>100 μJy DOGs are 3 times more numerous but 8 times less luminous in the IR. The far-IR SED shape of DOGs is similar to that of SMGs (average dust temperature of around 30 K), but DOGs have a higher mid-IR-to-far-IR flux ratio. The average star formation-dominated DOG has a star formation rate of 200 Msolar yr-1, which, given their space density, amounts to a contribution of 0.01 Msolar yr-1 Mpc-3 (or 5%-10%) to the star formation rate density at z~2