AGRICULTURAL PRICE SPREADS AND MARKET PERFORMANCE

Demand and Price Analysis, Marketing,

Circular and near-circular polarization states of evanescent monochromatic light fields in total internal reflection

Conditions for the production of near-circular polarization states of the evanescent field present in the rarer medium in total internal reflection of incident monochromatic p-polarized light at a dielectric-dielectric planar interface are determined. Such conditions are satisfied if high-index (\u3e3.2) transparent prism materials (e.g., GaP and Ge) are used at angles of incidence well above the critical angle but sufficiently below grazing incidence. Furthermore, elliptical polarization of incident light with nonzero p and s components can be tailored to cause circular polarization of the resultant tangential electric field in the plane of the interface or circular polarization of the transverse electric field in a plane normal to the direction of propagation of the evanescent wave. Such polarization control of the evanescent field is significant, e.g., in the fluorescent excitation of molecules adsorbed at solid-liquid and solid-gas interfaces by total internal reflection

Circular and near-circular polarization states of evanescent monochromatic light fields in total internal reflection

Conditions for the production of near-circular polarization states of the evanescent field present in the rarer medium in total internal reflection of incident monochromatic p-polarized light at a dielectric-dielectric planar interface are determined. Such conditions are satisfied if high-index (\u3e3.2) transparent prism materials (e.g., GaP and Ge) are used at angles of incidence well above the critical angle but sufficiently below grazing incidence. Furthermore, elliptical polarization of incident light with nonzero p and s components can be tailored to cause circular polarization of the resultant tangential electric field in the plane of the interface or circular polarization of the transverse electric field in a plane normal to the direction of propagation of the evanescent wave. Such polarization control of the evanescent field is significant, e.g., in the fluorescent excitation of molecules adsorbed at solid-liquid and solid-gas interfaces by total internal reflection

New type of ellipsometry in infrared spectroscopy: The double-reference method

We have developed a conceptually new type of ellipsometry which allows the determination of the complex refractive index by simultaneously measuring the unpolarized normal-incidence reflectivity relative to the vacuum and to another reference media. From these two quantities the complex optical response can be directly obtained without Kramers-Kronig transformation. Due to its transparency and large refractive index over a broad range of the spectrum, from the far-infrared to the soft ultraviolet region, diamond can be ideally used as a second reference. The experimental arrangement is rather simple compared to other ellipsometric techniques.Comment: submitted to Appl. Phys. Let

Principal angle, principal azimuth, and principal-angle ellipsometry of film-substrate systems

When the film thickness is considered as a parameter, a system composed of a transparent film on an absorbing substrate (in a transparent ambient) is characterized by a range of principal angle ø¯min ≤ ø¯ ≤ ø¯max over which the associated principal azimuth ψ¯ varies between 0° and 90° (i.e., 0° ≤ ψ¯ ≤ 90°) and the reflection phase difference Δ assumes either one of the two values: +π/2 or −π/2. We determine the principal angle ø¯(d) and principal azimuth ψ¯(d) as functions of film thickness d for the vacuum-SiO2-Si system at several wavelengths as a concrete example. When the film thickness exceeds a certain minimum value, more than one principal angle becomes possible, as can be predicted by a simple graphical construction. We apply the results to principal-angle ellipsometry. (PAE) of film-substrate systems; the relationship between ø¯ and ψ¯ during film growth is particularly interesting

Single-element rotating-polarizer ellipsometer for film-substrate systems

A novel and very simple ellipsometer for the characterization of film-substrate systems that employs one rotating optical element (a polarizer) is proposed. The ellipsometer is based on detecting the angles of incidence at which a film-substrate system has equal amplitude attenuations for light polarized parallel (p) and perpendicular (s) to the plane of incidence. At a certain wavelength, the film thickness of the filmsubstrate system has to lie within permissible-thickness bands (PTB) for the technique to apply

Constant-psi constant-delta contour maps: applications to ellipsometry and to reflection-type optical devices

Constant-psi constant-delta contour maps in the reduced angle-of-incidence-film-thickness plane that are useful in ellipsometry and in design of reflection-type optical devices are discussed. As a specific example, a contour map is given for the SiO2-Si film-substrate system at the 6328-Å He-Ne laser wavelength

Constant-psi constant-delta contour maps: applications to ellipsometry and to reflection-type optical devices

Constant-psi constant-delta contour maps in the reduced angle-of-incidence-film-thickness plane that are useful in ellipsometry and in design of reflection-type optical devices are discussed. As a specific example, a contour map is given for the SiO2-Si film-substrate system at the 6328-Å He-Ne laser wavelength

Transmission of p- and s-polarized light through a prism and the condition of minimum deviation

The condition of minimum deviation (MD) by a transparent optically isotropic prism is re-derived, and expressions for the intensity transmittances Tp(θ) and Ts(θ) of an uncoated prism of refractive index n and prism angle α for incident p- ands-polarized light and their derivatives with respect to the internal angle of refraction θ are obtained. When the MD condition(θ=α/2) is satisfied, Ts is maximum and Tp is maximum or minimum. The transmission ellipsometric parametersψt,Δt of a symmetrically coated prism are also shown to be locally stationary with respect to θ at θ=α/2 . The constraint on (n,α) for maximally flat transmittance (MFT) of p-polarized light at and near the MD condition is determined. The transmittance Tp of prisms represented by points that lie below the locus (n,α) of MFT exhibits oscillation as a function of θ. No similar behavior is found for the s polarization. Magnitudes and angular positions of the maxima and minima of the oscillatory Tp -versus-θ curves are also calculated as functions of α for a ZnS prism of refractive indexn=2.35 in the visible