Monolithic InP-Based Grating Spectrometer for Wavelength-Division Multiplexed Systems at 1.5 μm

A monolithic InP-based grating spectrometer for use in wavelength-division multiplexed systems at 1.5 μm is reported. The spectrometer uses a single etched reflective focusing diffraction grating and resolves >50 channels at 1 nm spacing with a ~0.3nm channel width and at least 19dB channel isolation. Operation is essentially of the state of the input polarisation

Wavelength-selectable laser emission from a multistripe array grating integrated cavity laser

We report laser operation of a multistripe array grating integrated cavity (MAGIC) laser in which the wavelength of the emission from a single output stripe is chosen by selectively injection pumping a second stripe. We demonstrate a device that lases in the 1.5 µm fiber band at 15 wavelengths, evenly spaced by ~2 nm. The single-output/wavelength-selectable operation, together with the accurate predefinition of the lasing wavelengths, makes the MAGIC laser a very attractive candidate for use in multiwavelength networks

Ion Beam Machining Of Optoelectronic Components

We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam etching. These qualities are used to fabricate mirrors and deflect light in InGaAs and GaAs waveguide structures. Either a maskless technique, using a focussed ion beam (FIB), or a lithographically deposited mask followed by broad-beam etching (CAIBE) are employed to produce such facets. Here, we describe the two examples of application of high-resolution ion beam etching techniques towards miniaturizing optoelectronic devices. We show the conversion of an edge-emitting laser structure into a surface-emitting structure, by cutting 45° reflection mirrors, and the fabrication of a monolithic InP-based wavelength demultiplexer by etching a diffraction grating

Ultracompact monolithic integration of balanced, polarization diversity photodetectors for coherent lightwave receivers

The authors have monolithically integrated an optical front-end on InP for balanced, polarization-diversity coherent lightwave reception which is only 1.3-mm long. Low on-chip insertion loss (<4.5 dB) and balanced photoresponse (1.05:1 or better) are achieved at 1.5-μm wavelength using straightforward, regrowth-free fabrication. Low-capacitance photodetectors (≤0.15 pF) are employed for high bandwidth operation

Spectrometer on a chip: InP-based integrated grating spectrograph for wavelength-multiplexed optical processing

We report the performance of an InP-based integrated spectrometer and consider its application in wavelength division multiplexed (WDM) systems. The wavelength multiplexer/demultiplexer operates in the 1.5 micrometers fiber band and disperses 1 nm spaced signals over a spectral range of 75 nm. Crosstalk between the channels is -19 dB and the optical performance of the spectrometer is essentially insensitive to the polarization of the incident light. Use of the device in multiwavelength telecommunication and computer local area networks is discussed

Spectrometer On A Chip: An InP-based Grating Demultiplexer For WDM Applications At 1.5μm

We report an InP-based grating spectrometer for WDM systems operating in the 1.5µm fiber band. The spectrometer resolves more than 50 wavelength demultiplexed channels at 1mm spacing with a 3Λ channel width and at least 19dB isolation between outputs. The spectrometer operation is almost independent of the state of the input polarization

Low-loss, Ultra-compact Monolithic Integration Of High-speed Polarization-diversity Photodetectors

Polarization-selective optical devices are required for polarization-diversity coherent lightwave receivers.[l] Monolithic integration of such devices with photodetectors improves detector functionality and eliminates package complexity by reducing part count and hybrid optical interconnects. Compatibility with high III-V materials' cost, however, requires simple, high-yield processes and compact device size. We previously proposed a simple and compact integration scheme employing metal-loaded vertical couplers for polarization splitting and vertically-coupled photodiodes for O/E conversion. Initial experiments using InGaAsP/InP demonstrated satisfactory optical functionality, with 10.6 and 16dB polarization selectivity for TE and TM polarized-light.[2] Here we show how such integrated devices can be modified to achieve suitable electronic performance, including wide bandwidth and high quantum efficiency

Ion Beam Machining Of Optoelectronic Components

We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam etching. These qualities are used to fabricate mirrors and deflect light in InGaAs and GaAs waveguide structures. Either a maskless technique, using a focussed ion beam (FIB), or a lithographically deposited mask followed by broad-beam etching (CAIBE) are employed to produce such facets. Here, we describe the two examples of application of high-resolution ion beam etching techniques towards miniaturizing optoelectronic devices. We show the conversion of an edge-emitting laser structure into a surface-emitting structure, by cutting 45° reflection mirrors, and the fabrication of a monolithic InP-based wavelength demultiplexer by etching a diffraction grating