Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 113, 203513 (2013) and may be found at https://doi.org/10.1063/1.4807581.We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104 cm−2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 113, 103504 (2013) and may be found at https://doi.org/10.1063/1.4794094.Compensation effects in metal organic chemical vapour deposition grown GaN doped with magnesium are investigated with Raman spectroscopy and photoluminescence measurements. Examining the strain sensitive E2(high) mode, an increasing compressive strain is revealed for samples with Mg-concentrations lower than 7 × 1018 cm−3. For higher Mg-concentrations, this strain is monotonically reduced. This relaxation is accompanied by a sudden decrease in crystal quality. Luminescence measurements reveal a well defined near band edge luminescence with free, donor bound, and acceptor bound excitons as well as a characteristic donor acceptor pair (DAP) luminescence. Following recent results, three acceptor bound excitons and donor acceptor pairs are identified. Along with the change of the strain, a strong modification in the luminescence of the dominating acceptor bound exciton and DAP luminescence is observed. The results from Raman spectroscopy and luminescence measurements are interpreted as fingerprints of compensation effects in GaN:Mg leading to the conclusion that compensation due to defect incorporation triggered by Mg-doping already affects the crystal properties at doping levels of around 7 × 1018 cm−3. Thereby, the generation of nitrogen vacancies is introduced as the driving force for the change of the strain state and the near band edge luminescence.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Electronic excitations stabilized by a degenerate electron gas in semiconductors

Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening. Despite their absence, we found pronounced emission traces in the below-band-edge region of bulk, germanium-doped GaN up to a temperature of 100 K, mimicking sharp spectral features at high free electron concentrations (3.4E19–8.9E19 cm−3). Our interpretation of the data suggests that a degenerate, three-dimensional electron gas stabilizes a novel class of quasiparticles, which we name collexons. These many-particle complexes are formed by exchange of electrons with the Fermi gas. The potential observation of collexons and their stabilization with rising doping concentration is enabled by high crystal quality due to the almost ideal substitution of host atoms with dopants.DFG, 43659573, SFB 787: Semiconductor Nanophotonics: Materials, Models, Device

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104cm-2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures. © 2013 AIP Publishing LLC

Temperature-dependent recombination coefficients in InGaN light-emitting diodes : hole localization, Auger processes, and the green gap

We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting the quantum efficiency of such devices. In the green spectral range, the efficiency deteriorates, which we assign to a combination of diminishing electronhole wave function overlap and enhanced Auger processes, while a significant reduction in material quality with increased In content can be precluded. Here, we analyze and quantify the entire balance of all loss mechanisms and highlight the particular role of hole localization

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling

New Role, New Country: introducing US physician assistants to Scotland

This paper draws from research commissioned by the Scottish Executive Health Department (SEHD). It provides a case study in the introduction of a new health care worker role into an already well established and "mature" workforce configuration It assesses the role of US style physician assistants (PAs), as a precursor to planned "piloting" of the PA role within the National Health Service (NHS) in Scotland

Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements

We report the phonon deformation potentials of wurtzite GaN and ZnO for all zone center optical phonon modes determined by Raman measurements as a function of uniaxial pressure. Despite all the structural and optical similarities between these two material systems, the pressure dependency of their vibrational spectra exhibits fundamental distinctions, which is attributed to their different bond ionicities. In addition, the LO-TO splitting of the A1 and E1 phonon modes is analyzed which yields insight into the uniaxial pressure dependency of Born's transverse effective charge e T*. © 2011 American Institute of Physics

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 104 cm2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures

Breakdown of far-field raman selection rules by light-plasmon coupling demonstrated by tip-enhanced raman scattering

We present an experimental study on the near-field light-matter interaction by tip-enhanced Raman scattering (TERS) with polarized light in three different materials: germanium-doped gallium nitride (GaN), graphene, and carbon nanotubes. We investigate the dependence of the TERS signal on the incoming light polarization and on the sample carrier concentration, as well as the Raman selection rules in the near-field. We explain the experimental data with a tentative quantum mechanical interpretation, which takes into account the role of plasmon polaritons, and the associated evanescent field. The driving force for the breakdown of the classical Raman selection rules in TERS is caused by photon tunneling through the perturbation of the evanescent field, with the consequent polariton annihilation. Predictions based on this quantum mechanical approach are in good agreement with the experimental data, which are shown to be independent of incoming light polarization, leading to new Raman selection rules for TERS