1,285 research outputs found
Anomalous phonon behavior in the high temperature shape memory alloy: TiPd:Cr
Ti50 Pd50-xCrx is a high temperature shape memory alloy with a martensitic
transformation temperature strongly dependent on the Cr composition. Prior to
the transformation a premartensitic phase is present with an incommensurate
modulated cubic lattice with wave vector of q0=(0.22, 0.22, 0). The temperature
dependence of the diffuse scattering in the cubic phase is measured as a
function temperature for x=6.5, 8.5, and 10 at. %. The lattice dynamics has
been studied and reveals anomalous temperature and q-dependence of the
[110]-TA2 transverse phonon branch. The phonon linewidth is broad over the
entire Brillouin zone and increases with decreasing temperature, contrary to
the behavior expected for anharmonicity. No anomaly is observed at q0. The
results are compared with first principles calculation of the phonon structure.Comment: 26 pages, 11 figure
Magnetic properties and magnetostructural phase transitions in Ni2+xMn1-xGa shape memory alloys
A systematic study of magnetic properties of Ni2+xMn1-xGa (0 \le x \le 0.19)
Heusler alloys undergoing structural martensite-austenite transformations while
in ferromagnetic state has been performed. From measurements of spontaneous
magnetization, Ms(T), jumps \Delta M at structural phase transitions were
determined. Virtual Curie temperatures of the martensite were estimated from
the comparison of magnetization in martensitic and austenitic phases. Both
saturation magnetic moments in ferromagnetic state and effective magnetic
moments in paramagnetic state of Mn and Ni atoms were estimated and the
influence of delocalization effects on magnetism in these alloys was discussed.
The experimental results obtained show that the shift of martensitic transition
temperature depends weakly on composition. The values of this shift are in good
correspondence with Clapeyron-Clausius formalism taking into account the
experimental data on latent heat at martensite-austenite transformations.Comment: 7 pages, 8 figure
Numerical Simulation of 3D Image Reconstruction of LHD Plasma with IR Imaging Video Bolometers
Homogenization in magnetic-shape-memory polymer composites
Magnetic-shape-memory materials (e.g. specific NiMnGa alloys) react with a
large change of shape to the presence of an external magnetic field. As an
alternative for the difficult to manifacture single crystal of these alloys we
study composite materials in which small magnetic-shape-memory particles are
embedded in a polymer matrix. The macroscopic properties of the composite
depend strongly on the geometry of the microstructure and on the
characteristics of the particles and the polymer.
We present a variational model based on micromagnetism and elasticity, and
derive via homogenization an effective macroscopic model under the assumption
that the microstructure is periodic. We then study numerically the resulting
cell problem, and discuss the effect of the microstructure on the macroscopic
material behavior. Our results may be used to optimize the shape of the
particles and the microstructure.Comment: 17 pages, 4 figure
Purposive behavior acquisition for a real robot by vision-based reinforcement learning
Measurements of the gate tuned superfluid density in superconducting LaAlO3/SrTiO3
The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a
superconducting two-dimensional electron system that can be modulated by a gate
voltage. While gating of the conductivity has been probed extensively and
gating of the superconducting critical temperature has been demonstrated, the
question whether, and if so how, the gate tunes the superfluid density and
superconducting order parameter is unanswered. We present local magnetic
susceptibility, related to the superfluid density, as a function of
temperature, gate voltage and location. We show that the temperature dependence
of the superfluid density at different gate voltages collapse to a single curve
characteristic of a full superconducting gap. Further, we show that the dipole
moments observed in this system are not modulated by the gate voltage
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