Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or memory device that is indicative of the reliability and stochastic variability in its performance. In the context of the resistive random access memory (RRAM), RTN becomes a key criterion that determines the read disturb immunity and memory window between the low (LRS) and high resistance states (HRS). With the drive towards ultra-low power memory (low reset current) and aggressive scaling to 10 × 10 nm2 area, contribution of RTN is significantly enhanced by every trap (vacancy) in the dielectric. The underlying mechanisms governing RTN in RRAM are yet to be fully understood. In this study, we aim to decode the role of conductance fluctuations caused by oxygen vacancy transport and inelastic electron trapping and detrapping processes. The influence of resistance state (LRS, shallow and deep HRS), reset depth and reset stop voltage (VRESET-STOP) on the conductance variability is also investigated. © 2013 IEEE

Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

An extensive investigation of the pre-existing and generated defects in amorphous-Si/TiO2 based non-filamentary (a-VMCO) RRAM device has been carried out in this work to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant- voltage-stress (CVS) analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states (LRS and HRS) are correlated with the profile modulation of pre-existing defects in the ‘defect-less’ region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution

TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device

Mechanisms of time-dependent-dielectric-breakdown (TDDB) in non-filamentary a-Si/TiO2 RRAM cell (a-VMCO) have been examined in this work, including defects generation in the grain boundary, defects clustering and different defects generation rates in a-Si and TiO2 layers. The unique feature of a bimodal Weibull distribution at low resistance state (LRS) and a single shallow slope distribution at high resistance state (HRS) cannot be explained by the above mechanisms. By using a combination of constant-voltage-stress (CVS), time-to-breakdown Weibull distribution and random-telegraph-noise (RTN) based defect profiling in devices of various sizes, layer thickness and processes, it is revealed that the defect profile is modulated when switching between HRS and LRS and the correlation of defect profile modulation with local defect generation rate can explain the difference in Weibull distributions at HRS and LRS. The transition from bimodal distribution at LRS to a single-steep- slope with thinner a-Si layer, and the good area scaling of Weibull distribution at HRS but not at LRS, can also be explained. The critical layers affecting the TDDB in a-VMCO are identified, providing useful guidance for device performance improvement

RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism

Filament rupture/restoration induced by movement of defects, e.g. oxygen ions/vacancies (Vo), is considered as the switching mechanism in HfO2 RRAM. However, details of filament alteration during switching are still speculative, due to the limitations of existing experiment‐based probing techniques, impeding its understanding. Direct experimental evidence is largely missing at defect level for investigating filament alteration and linking it with switching and failure mechanisms, which is also needed for performance and reliability modelling. In this work, for the first time, an RTN based defect tracking technique (RDT) is developed for RRAM devices, which can monitor the movements of defects and statistically provide their spatial and energy profiles. The critical filament region (CFR) is experimentally identified and its alteration is observed and correlated with switching operations under various DC and AC conditions. A new endurance SET failure mechanism is also revealed. This provides a useful tool for further development of RRAM technology

On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

Rapid advances in the semiconductor industry, driven largely by device scaling, are now approaching fundamental physical limits and face severe power, performance, and cost constraints. Multifunctional materials and devices may lead to a paradigm shift toward new, intelligent, and efficient computing systems, and are being extensively studied. Herein examines how, by controlling the internal ion distribution in a solid‐state film, a material’s chemical composition and physical properties can be reversibly reconfigured using an applied electric field, at room temperature and after device fabrication. Reconfigurability is observed in a wide range of materials, including commonly used dielectric films, and has led to the development of new device concepts such as resistive random‐access memory. Physical reconfigurability further allows memory and logic operations to be merged in the same device for efficient in‐memory computing and neuromorphic computing systems. By directly changing the chemical composition of the material, coupled electrical, optical, and magnetic effects can also be obtained. A survey of recent fundamental material and device studies that reveal the dynamic ionic processes is included, along with discussions on systematic modeling efforts, device and material challenges, and future research directions.By controlling the internal ion distribution in a solid‐state film, the material’s chemical composition and physical (i.e., electrical, optical, and magnetic) properties can be reversibly reconfigured, in situ, using an applied electric field. The reconfigurability is achieved in a wide range of materials, and can lead to the development of new memory, logic, and multifunctional devices and systems.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/141225/1/adma201702770.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/141225/2/adma201702770_am.pd

Quantitative image analysis for the characterization of microbial aggregates in biological wastewater treatment : a review

Quantitative image analysis techniques have gained an undeniable role in several fields of research during the last decade. In the field of biological wastewater treatment (WWT) processes, several computer applications have been developed for monitoring microbial entities, either as individual cells or in different types of aggregates. New descriptors have been defined that are more reliable, objective, and useful than the subjective and time-consuming parameters classically used to monitor biological WWT processes. Examples of this application include the objective prediction of filamentous bulking, known to be one of the most problematic phenomena occurring in activated sludge technology. It also demonstrated its usefulness in classifying protozoa and metazoa populations. In high-rate anaerobic processes, based on granular sludge, aggregation times and fragmentation phenomena could be detected during critical events, e.g., toxic and organic overloads. Currently, the major efforts and needs are in the development of quantitative image analysis techniques focusing on its application coupled with stained samples, either by classical or fluorescent-based techniques. The use of quantitative morphological parameters in process control and online applications is also being investigated. This work reviews the major advances of quantitative image analysis applied to biological WWT processes.The authors acknowledge the financial support to the project PTDC/EBB-EBI/103147/2008 and the grant SFRH/BPD/48962/2008 provided by Fundacao para a Ciencia e Tecnologia (Portugal)

Distribution and generation of traps in SiO2/Al2O3 gate stacks

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. © 2007 Elsevier Ltd. All rights reserved