15,783 research outputs found

    Isovector channel of quark-meson-coupling model and its effect on symmetry energy

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    The non-relativistic approximation of the quark-meson-coupling model has been discussed and compared with the Skyrme-Hartree-Fock model which includes spin exchanges. Calculations show that the spin-exchange interaction has important effect on the descriptions of finite nuclei and nuclear matter through the Fock exchange. Also in the quark-meson-coupling model, it is the Fock exchange that leads to a nonlinear density-dependent isovector channel and changes the density-dependent behavior of the symmetry energy.Comment: 20 pages, 9 figures and 1 table, accepted for publication in Nuclear Physics

    The structural and electrical properties of thermally grown TiO2 thin films

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    We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy (TOF-SIMS) was used to analyse the interfacial and chemical composition of the TiO2 thin films. Metal oxide semiconductor (MOS) capacitors with Pt or Al as the top electrode were fabricated to analyse electrical properties of the TiO2 thin films. We show that the reactivity of the Al top contact affects electrical properties of the oxide layers. The current transport mechanism in the TiO2 thin films is shown to be Poole–Frenkel (P–F) emission at room temperature. At 84 K, Fowler– Nordheim (F–N) tunnelling and trap-assisted tunnelling are observed. By comparing the electrical characteristics of thermally grown TiO2 thin films with the properties of those grown by other techniques reported in the literature, we suggest that, irrespective of the deposition technique, annealing of as-deposited TiO2 in O2 is a similar process to thermal oxidation of Ti thin films

    Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

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    The development of micromachining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, a WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements on a gold-plated silicon waveguide show performance comparable to that of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems
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