216 research outputs found

    Modification of magnetic and transport properties of manganite layers in Au/La_0.67Sr_0.33MnO_3/SrTiO_3 interfaces

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    The effect of gold capping on magnetic and transport properties of optimally doped manganite thin films is studied. An extraordinary suppression of conductivity and magnetic properties occurs in epitaxial (001) La_0.67Sr_0.33MnO_3 (LSMO) films grown on SrTiO_3 upon deposition of 2 nm of Au: in the case of ultrathin films of LSMO (4 nm thick) the resistivity increases by four orders of magnitude while the Curie temperature decreases by 180 K. Zero-field 55Mn nuclear magnetic resonance reveals a significant reduction of ferromagnetic double-exchange mechanism in manganite films upon the gold capping. We find evidence for the formation of a 1.9-nm thick magnetic "dead-layer" at the Au/LSMO interface, associated with the creation of interfacial non double-exchange insulating phases.Comment: 4 figure

    Disrespected Literatures: An Overdue Initiative

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    Domain wall displacement in Py square ring for single nanometric magnetic bead detection

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    A new approach based on the domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particles is presented. We modeled and experimentally demonstrated the viability of the approach using an anisotropic magnetoresistance device made by a micron-size square ring of Permalloy designed for application in magnetic storage. This detection concept can be suitable to biomolecular recognition, and in particular to single molecule detection.Comment: 8pages, 3figure

    Postpandemic Conferences: The DATE 2023 Experience

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    Date is a leading international event providing unique networking opportunities. The conference brings together designers and design automation users, researchers, and vendors, as well as specialists in hardware and software design, testing, and manufacturing of electronic circuits and systems—from system-level hardware and software implementation down to integrated circuit design

    Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

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    We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.Comment: To appear in Physical Review Letter

    Wide-range optical spin orientation in Ge from near-infrared to visible light

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    Ge-based spin-photodiodes have been employed to investigate the spectral dependence of optical spin orientation in germanium, in the range 400-1550 nm. We found the expected maximum in the spin polarization of photocarriers for excitation at the direct gap in Γ (1550 nm) and a second sizable peak due to photogeneration in the L valleys (530 nm). Data suggest distinct spin depolarization mechanisms for excitation at Γ and L, with shorter spin relaxation times whether the X point is involved. These devices can be used as integrated photon-helicity detectors over a wide spectral range

    Vapor etching to avoid micro-masking by gas-bubbles in wet release of MEMS

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    We report on the formation of gas bubbles during the release of MEMS devices using buffered oxide etch. Several approaches to mitigate the problem are proposed and tested together with a qualitative study of the phenomenon. The chemical reaction behind such phenomenon and the influence of defects and topography is discussed. Finally, a comparison with the HF-vapor release technique is shown
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