Graded Lie algebras of maximal class IV

We describe the isomorphism classes of certain infinite-dimensional graded Lie algebras of maximal class, generated by an element of weight one and an element of weight two, over fields of odd characteristic.Comment: 38 pages. See also http://www-math.science.unitn.it/~caranti/ and http://users.ox.ac.uk/~vlee

Quasiclassical Green function in an external field and small-angle scattering

The quasiclassical Green functions of the Dirac and Klein-Gordon equations in the external electric field are obtained with the first correction taken into account. The relevant potential is assumed to be localized, while its spherical symmetry is not required. Using these Green functions, the corresponding wave functions are found in the approximation similar to the Furry-Sommerfeld-Maue approximation. It is shown that the quasiclassical Green function does not coincide with the Green function obtained in the eikonal approximation and has a wider region of applicability. It is illustrated by the calculation of the small-angle scattering amplitude for a charged particle and the forward photon scattering amplitude. For charged particles, the first correction to the scattering amplitude in the non-spherically symmetric potential is found. This correction is proportional to the scattering angle. The real part of the amplitude of forward photon scattering in a screened Coulomb potential is obtained.Comment: 20 pages, latex, 1 figur

Relativistic corrections to the electromagnetic polarizabilities of compound systems

The low-energy amplitude of Compton scattering on the bound state of two charged particles of arbitrary masses, charges and spins is calculated. A case in which the bound state exists due to electromagnetic interaction (QED) is considered. The term, proportional to $\omega^2$, is obtained taking into account the first relativistic correction. It is shown that the complete result for this correction differs essentially from the commonly used term $\Delta\alpha$, proportional to the r.m.s. charge radius of the system. We propose that the same situation can take place in the more complicated case of hadrons.Comment: 19 pages, LaTe

Roughening of ion-eroded surfaces

Recent experimental studies focusing on the morphological properties of surfaces eroded by ion-bombardment report the observation of self-affine fractal surfaces, while others provide evidence about the development of a periodic ripple structure. To explain these discrepancies we derive a stochastic growth equation that describes the evolution of surfaces eroded by ion bombardment. The coefficients appearing in the equation can be calculated explicitly in terms of the physical parameters characterizing the sputtering process. Exploring the connection between the ion-sputtering problem and the Kardar-Parisi-Zhang and Kuramoto-Sivashinsky equations, we find that morphological transitions may take place when experimental parameters, such as the angle of incidence of the incoming ions or their average penetration depth, are varied. Furthermore, the discussed methods allow us to calculate analytically the ion-induced surface diffusion coefficient, that can be compared with experiments. Finally, we use numerical simulations of a one dimensional sputtering model to investigate certain aspects of the ripple formation and roughening.Comment: 20 pages, LaTeX, 5 ps figures, contribution to the 4th CTP Workshop on Statistical Physics "Dynamics of Fluctuating Interfaces and Related Phenomena", Seoul National University, Seoul, Korea, January 27-31, 199

Coulomb corrections to bremsstrahlung in electric field of heavy atom at high energies

The differential and partially integrated cross sections are considered for bremsstrahlung from high-energy electrons in atomic field with the exact account of this field. The consideration exploits the quasiclassical electron Green's function and wave functions in an external electric field. It is shown that the Coulomb corrections to the differential cross section are very susceptible to screening. Nevertheless, the Coulomb corrections to the cross section summed up over the final-electron states are independent of screening in the leading approximation over a small parameter $1/mr_{scr}$ ($r_{scr}$ is a screening radius, $m$ is the electron mass, $\hbar=c=1$). Bremsstrahlung from an electron beam of the finite size on heavy nucleus is considered as well. Again, the Coulomb corrections to the differential probability are very susceptible to the beam shape, while those to the probability integrated over momentum transfer are independent of it, apart from the trivial factor, which is the electron-beam density at zero impact parameter. For the Coulomb corrections to the bremsstrahlung spectrum, the next-to-leading terms with respect to the parameters $m/\epsilon$ ($\epsilon$ is the electron energy) and $1/mr_{scr}$ are obtained.Comment: 13 pages, 4 figure

Measurement of the SOC State Specific Heat in ^4He

When a heat flux Q is applied downward through a sample of liquid 4He near the lambda transition, the helium self organizes such that the gradient in temperature matches the gravity induced gradient in Tlambda. All the helium in the sample is then at the same reduced temperature tSOC = ((T[sub SOC] - T[sub lambda])/T[sub lambda]) and the helium is said to be in the Self-Organized Critical (SOC) state. We have made preliminary measurements of the 4He SOC state specific heat, C[del]T(T(Q)). Despite having a cell height of 2.54 cm, our results show no difference between C[del]T and the zero-gravity 4He specific heat results of the Lambda Point Experiment (LPE) [J.A. Lipa et al., Phys. Rev. B, 68, 174518 (2003)] over the range 250 to 450 nK below the transition. There is no gravity rounding because the entire sample is at the same reduced temperature tSOC(Q). Closer to Tlambda the SOC specific heat falls slightly below LPE, reaching a maximum at approximately 50 nK below Tlambda, in agreement with theoretical predictions [R. Haussmann, Phys. Rev. B, 60, 12349 (1999)]

Noise and Equivalent Circuit of Double Injection

Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise