Metallization of self-assembled organic monolayer surfaces by Pd nanocluster deposition

A condensation-cell-type cluster aggregation source was used to deposit Pd clusters on the self-assembled monolayers of four different types of organic molecules. Mica slides covered by Au (111) were coated with self assembled monolayer films of n-dodecanethiol, 4-mercaptopyridine, dimethyldithiocarbamate, and diethyldithiocarbamate, and the behaviour of Pd clusters on these surfaces, as well as on the bare Au (111) surface, was characterized using scanning tunnelling microscopy and X-ray photoelectron spectroscopy. The aim of this study was to present an alternative means for the metallization of organic layers, through the use of preformed clusters that, unlike single adatoms, are less likely to penetrate the organic layer and cause unwanted interfacial layers or short circuits, and deduce its suitability for the various types of organic self-assembled monolayers. Our experimental results indicate that all of the studied self-assembled monolayers are impenetrable for Pd clusters deposited at thermal energies. Contrary to most methods of metallization, Pd cluster deposition therefore provides an efficient means of growing metal overlayers on organic self-assembled monolayers.Peer reviewe

Studies on Li3AlF6 thin film deposition utilizing conversion reactions of thin films

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Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes.Peer reviewe