MAJOR DEPRESSION AND INSULIN RESISTANCE AMONG NONDIABETIC U.S. ADULTS AGED 20-39 YEARS: THE ROLES OF GENDER AND RACE/ETHNICITY

The relationship between depression and insulin resistance has been evaluated in previous studies but with conflicting results. No study was found that investigates the role of race/ethnicity in the relationship between depression and insulin resistance. The purpose of this study was to: 1) determine the prevalence of major depression and insulin resistance among nondiabetic young adults aged 20-39 years in the United States, 2) examine the relationship between major depression and insulin resistance among nondiabetic young adults aged 20-39 years in the United States, and 3) determine whether this relationship varies by gender, race/ethnicity, or measure of depression. Analyses of cross-sectional data from the National Health and Nutrition Examination Survey (NHANES) 1999-2008 were performed. The study sample consisted of 1,054 (46.5%) men and 1,211 (53.5%) women who were nondiabetic and aged 20-39 years (N = 2,265). Major depression was measured by the Composite International Diagnostic Interview in NHANES 1999-2004 and by the Patient Health Questionnaire-9 in NHANES 2005-2008. Insulin resistance was measured by the homeostasis model assessment for insulin resistance. The prevalence of major depression and insulin resistance among nondiabetic U.S. adults aged 20-39 years in the study was 3.7% (n = 84; weighted % = 3.8) and 25.7% (n = 582; weighted % = 22.7) respectively. No significant association was found between major depression and insulin resistance in bivariate logistic regression analysis. However, a significant interaction effect between gender and major depression was observed. For men, major depression was negatively associated with insulin resistance after adjusting for age, race/ethnicity, systolic blood pressure, triglyceride level, high-sensitivity C-reactive protein, obesity, leisure time physical activity, smoking, and alcohol consumption. In contrast, no significant association between major depression and insulin resistance among women was found. There was no significant interaction between race/ethnicity and major depression. No significant variations in the relationship between major depression and insulin resistance by measure of depression were revealed. Study findings provide support for a significant positive relationship between insulin resistance and 1) systolic blood pressure, 2) triglyceride level, 3) and obesity as measured by body mass index or waist circumference among nondiabetic young adults aged 20-39 years

The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material

The potentials of Sn, In, or Al doped ZnSb thin film as candidates for phase change materials have been studied in this paper. It was found that the Zn-Sb bonds were broken by the addition of the dopants and homopolar Zn-Zn bonds and other heteropolar bonds, such as Sn-Sb, In-Sb, and Al-Sb, were subsequently formed. The existence of homopolar Sn-Sn and In-In bonds in Zn₅₀Sb₃₆Sn₁₄ and Zn₄₁Sb₃₆In₂₃ films, but no any Al-Al bonds in Zn₃₅Sb₃₀Al₃₅ film, was confirmed. All these three amorphous films crystallize with the appearance of crystalline rhombohedral Sb phase, and Zn₃₅Sb₃₅Al₃₅ film even exhibits a second crystallization process where the crystalline AlSb phase is separated out. The Zn₃₅Sb₃₀Al₃₅ film exhibits a reversible phase change behavior with a larger Ea ( 4.7 eV), higher Tc (~ 245ᴼ C), better 10-yr data retention (~ 182ᴼ C), less incubation time (20 ns at 70 mW), and faster complete crystallization speed (45 ns at 70 mW). Moreover, Zn₃₅Sb₃₀Al₃₅ film shows the smaller root-mean-square (1.654 nm) and less change of the thickness between amorphous and crystalline state (7.5%), which are in favor of improving the reliability of phase change memory.This work was financially supported by the Natural Science Foundation of China (Grant Nos. 61306147, 61377061), the Public Project of Zhejiang Province (Grant No.2014C31146), the Young Leaders of academic climbing project of the Education Department of Zhejiang Province (pd2013092), the Natural Science Foundation of Zhejiang Province (Grant No. LQ15F040002), the Scientific Research Foundation of Graduate School of Ningbo University, and sponsored by K. C. Wong Magna Fund in Ningbo University

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

This work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb₂Te crystalline grains

Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn 30.19(Sb₇Te₃)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.This work was financially supported by the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the CAS Special Grant for Postgraduate Research, Innovation and Practice, the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

Freely adjusted properties in Ge–S based chalcogenide glasses with iodine incorporation

International audienceIn this study, we examined the function of halogen iodine acting as a glass network modifier in green chalcogenide glasses based on the Ge–S system. We obtained a series of Ge–S–I glasses and determined their glass-forming region. We then recorded the physical, thermal, and optical properties and studied the effect of halogen iodine on Ge–S–I glasses. Results show that these glasses have relatively wide optical transmission window for infrared (IR) applications. The softening temperature of Ge–S–I glasses varies from 210.54 °C to 321.63 °C, this temperature fits well with some kinds of high-temperature polymers, such as PES and PEI, the polymers serve as protective layers with high strength and flexibility, thus simplifying the fabrication processes of IR chalcogenide glass fiber. Finally, we performed a purification process to eliminate impurities and to improve optical spectr

Te-based chalcogenide films with high thermal stability for phase change memory

This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In₂.₈Bi₃₆.₆Te₆₀.₆film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In₂.₈Bi₃₆.₆Te₆₀.₆film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10⁵, implying that current consumption could be low in the phase-change memory operation.This work was financially supported by the Natural Science Foundation of China (Grant Nos. 61008041, 61107047, and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Ningbo optoelectronic materials and devices creative team (Grant No. 2009B21007), the Open Research Fund of State Key Laboratory of Transient Optics and Photonics, Chinese Academy of Sciences (Grant No. SKLST201010), and sponsored by K. C. Wong Magna Fund in Ningbo University

Novel Ge–Ga–Te–CsBr Glass System with Ultrahigh Resolvability of Halide

International audienceCO2 molecule, one of the main molecules to create new life, should be probed accurately to detect the existence of life in exoplanets. The primary signature of CO2 molecule is approximately 15 μm, and traditional S- and Se-based glass fibers are unsuitable. Thus, Te-based glass is the only ideal candidate glass for far-infrared detection. In this study, a new kind of Te-based chalcohalide glass system was discovered with relatively stable and large optical band gap. A traditional melt-quenching method was adopted to prepare a series of (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glass samples. Experiment results indicate that the glass-forming ability and thermal properties of glass samples were improved when CsBr was added in the host of Ge–Ga–Te glass. Ge–Ga–Te glass could remarkably dissolve CsBr content as much as 85 at.%, which is the highest halide content in all reports for Te-based chalcohalide glasses. Moreover, ΔT values of these glass samples were all above 100 °C. The glass sample (Ge15Ga10Te75)65 (CsBr)35 with ΔT of 119 °C was the largest, which was 7 °C larger than that of Ge15Ga10Te75 host glass. The infrared transmission spectra of these glasses show that the far-infrared cut-off wavelengths of (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glasses were all beyond 25 μm. In conclusion, (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glasses are potential materials for far-infrared optical applicatio

Novel NaI improved Ge–Ga–Te far-infrared chalcogenide glasses

International audienceIn this study, a novel Te-based glass system was investigated. Some properties of Ge–Ga–Te–NaI chalcogenide glasses such as physical, thermal and optical transmitting were discussed. XRD patterns show this glass system with best amorphous state can dissolve content of NaI as much as 35 at.%. The lowest cut-off wavelength of glass samples is 1645 nm which is the smallest wavelength among the reported Te-based glasses doping with halide. DSC curves indicate that all glass samples have good thermal stabilities (ΔT > 100 °C) and the highest ΔT value corresponding to (Ge15Ga10Te75)85(NaI)15 glass is 120 °C which is 8 °C greater than that of Ge–Ga–Te host glass. The infrared spectra manifest Ge–Ga–Te–NaI chalcogenide glass system has a wide infrared transmission window between 1.6 μm and 20 μm. Consequently, Ge–Ga–Te–NaI glasses can be a candidate material for far infrared optic imaging and bio-sensing application