High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

Tunable bandgap can be induced in Bernal-stacked bilayer graphene by a perpendicularly electric displacement field. Here, we carry out a comprehensive study on the material synthesis of CVD Bernal-stacked bilayer graphene and devices for amplifying and mixing at high frequencies. The transistors show large output current density with excellent current saturation with high intrinsic voltage gain up to 77. Positive extrinsic forward power gain |<i>S</i>₂₁|² has been obtained up to 5.6 GHz as well as high conversion gain of −7 dB for the mixers. The conversion gain dependence on tunable on/off ratio of the transistors has also been discussed

Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors

Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm²/(V s) and small shifts of threshold voltage (<i>V</i>_th). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of α-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the <i>V</i>_th and carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable ZnN and NH bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the α-IGZO/SiO₂ interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of α-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays