A digital-controlled SiC-based solid state circuit breaker with soft switch-off method for DC power system

Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current

Switching Time Delay Optimization for “SiC+Si” Hybrid Device in a Phase-leg Configuration

Compared to SiC MOSFET, the switching loss of Si IGBT is much higher due to its slow switching speed and tail current. Si IGBT/SiC MOSFET hybrid switch device can reach to optimal performance with low static and dynamic loss, which can improve the current capacity of SiC devices and reduce the power loss of Si IGBT based converters. With the separated gate control signals, the switching moments of the two devices can be controlled independently to ensure Si IGBT under zero-voltage switching (ZVS) conditions. This measurement tends to reduce the switching loss of Si IGBT. However, the switching time delay between these two devices has significant impacts on its power loss. In this paper, the switching time delay optimization method is proposed to minimize the power loss of the hybrid switch. The static and dynamic characteristics of Si IGBT/SiC MOSFET hybrid-paralleled switch are studied, and a generalized power loss model for hybrid switch is developed. The influence of switching time delay on the characteristics of hybrid switch is analyzed and verified through double pulse tests in a phase-leg configuration. The experimental results show that the optimal turn-on delay time is that the two devices turn on at the same time and the turn-on loss can be reduced by about 73% compared with the solely Si IGBT and by about 52% compared with the solely SiC MOSFET. While the optimal turn-off sequence is that the Si IGBT turns off ahead of the SiC MOSFET. Under the proposed optimal turn-off delay time of the hybrid switch, the turn-off loss is reduced by about 61.4%. This optimization strategy is used in a Buck converter to verify the superiority of the SiC/Si hybrid switch and the optimal switching sequence. Simulation results show that the optimal switching sequence is consistent with theoretical analysis, and the efficiency is improved by 2.5% compared with Buck converter using solely Si IGBT

An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike

In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT. The minority carrier in N-base region of the IGBT are recombined in the form of exponential attenuation due to the conductivity modulation effect. When the SiC MOSFET is turned off, if the carrier recombination process of the IGBT is not finished, it needs to bear a large collector–emitter voltage change rate, resulting in apparent current spike. This current spike will increase the current stress of the device and produce additional turn-off loss. The equivalent model of double pulse test circuit of SiC/Si hybrid switch considering parasitic parameters is established, and the turn-off transient process is given analytically. The influence of turn-off delay time, circuit parameters and working conditions on current spike are analysed quantitatively. Combined with the consideration of device stress and comprehensive turn-off loss, an optimized circuit design method of SiC/Si hybrid switch considering turn-off current peak is proposed, which provides theoretical and design guidance for high reliability and high efficiency SiC/Si-based converters

Design of overvoltage suppression filter based on high-frequency modeling of cable in SiC based motor drive

SiC-based motor drives have the advantages of achieving higher efficiency and higher power density than traditional Si-based motor drives, and are gradually being widely used in electric power transmission. Due to different application situations such as oil field and airplane, a long cable is applied between the motor drive and three-phase motor and the distance may exceed hundreds of meters, which will cause serious voltage reflection problem, damaging working life of the motor. Meanwhile, the high slew rate of output voltage created by SiC-based motor drive deteriorates this phenomenon. In order to solve this problem, we first analyze the principle and influencing factors of voltage reflection, and establish the equivalent circuit model of the long cable. Then we put forward design method of LRC passive filter to suppress voltage reflection, and give simulation analysis. At last we built an experimental platform to verify the effectiveness of the LRC passive filter in SiC-based motor drive, and the experimental results show that the LRC passive filter with optimized parameters has good suppression effect of voltage reflection

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided

Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch

SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress

Quality of life in rectal cancer patients with permanent colostomy in Xi’an

Purposes: The aim of this study was to observe the quality of life (QOL) in rectal cancer patients with permanent colostomy in different periods after operation. Methods: A 1-,3-,6-month prospective study of QOL in 51 rectal cancer patients with permanent colostomy and 50 ones without permanent colostomy was assessed by using European Organization for Research and Treatment of Cancer (EORTC) QOL-30 and CR38 questionnaires. Results: The variation of QOL in different periods was “v” type. In the 1st postoperative month, these patients had the lowest quality of life scores, accompanied significantly varied functions and severe symptoms. Almost of all indexes of these patients had improved consistently in postoperative periods. The scores of global QOL even better than pre-operative level at 6th months post-operation, but the social function, body image, chemotherapy side effects and financial difficulties had not restored to the baseline level. Patients without permanent colostomy had a better score in most of categories of QOL-30 and CR38. Conclusions: The 1st postoperative month was crucial for patients’ recovery, in which we should pay great attention to these problems which relate to the recovery of rectal cancer patients with permanent colostomy.Keywords: Quality of life, Rectal cancer, Permanent colostomy, EORTC QOL-30 and CR38 questionnairesAfrican Health sciences Vol 14 No. 1 March 201

CRISPR-cas system:biological function in microbes and its use to treat antimicrobial resistant pathogens

The development of antibiotic resistance in bacteria is a major public health threat. Infection rates of resistant pathogens continue to rise against nearly all antimicrobials, which has led to development of different strategies to combat the antimicrobial resistance. In this review, we discuss how the newly popular CRISPR-cas system has been applied to combat antibiotic resistance in both extracellular and intracellular pathogens. We also review a recently developed method in which nano-size CRISPR complex was used without any phage to target themecAgene. However, there is still challenge to practice these methods in field against emerging antimicrobial resistant pathogens

Genome sequence of the cultivated cotton <i>Gossypium arboreum</i>

The complex allotetraploid nature of the cotton genome (AADD; 2n = 52) makes genetic, genomic and functional analyses extremely challenging. Here we sequenced and assembled the Gossypium arboreum (AA; 2n = 26) genome, a putative contributor of the A subgenome. A total of 193.6 Gb of clean sequence covering the genome by 112.6-fold was obtained by paired-end sequencing. We further anchored and oriented 90.4% of the assembly on 13 pseudochromosomes and found that 68.5% of the genome is occupied by repetitive DNA sequences. We predicted 41,330 protein-coding genes in G. arboreum. Two whole-genome duplications were shared by G. arboreum and Gossypium raimondii before speciation. Insertions of long terminal repeats in the past 5 million years are responsible for the twofold difference in the sizes of these genomes. Comparative transcriptome studies showed the key role of the nucleotide binding site (NBS)-encoding gene family in resistance to Verticillium dahliae and the involvement of ethylene in the development of cotton fiber cells.Genetics &amp; HereditySCI(E)[email protected]; [email protected]; [email protected]