Successful radiofrequency ablation of a right posteroseptal accessory pathway through an anomalous inferior vena cava and azygos continuation in a patient with incomplete situs inversus

We present a 43-year-old patient with paroxysmal supraventricular tachycardia. In the process of catheter ablation, we found interruption of the inferior vena cava with azygos continuation with incomplete situs inversus. In this patient, we adopted the lower approach via the anomalous inferior vena cava and azygos continuation to achieve stability of radiofrequency catheter for right posteroseptal accessory pathway, and successfully abolished the preexcitation

Computer-aided simulation of a rotary sputtering magnetron

In the past, computer-aided simulation of sputtering magnetron has been applied mainly to planar cathodes with flat target surfaces. In this work, we have simulated the target erosion profile of a cylindrical rotary magnetron by tracing electron trajectories and predicting ionization distribution. The electric potential is prescribed as a radial function. A fourth-order Runge–Kutta method is used to solve the electron movement equations, and a Monte Carlo method is employed to predict electron/Ar collision. It is shown that the simulation can predict the target erosion with reasonable accuracy. © 2004 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71287/2/JAPIAU-95-11-6017-1.pd

Triaqua-1κ3 O-μ-cyanido-1:2κ2 N:C-penta­cyanido-2κ5 C-tetra­kis­(dimethyl­formamide-1κO)-1-holmium(III)-2-iron(III) monohydrate

In the bimetallic cyanide-bridged title complex, [Fe0.98HoRu0.02(CN)6(C3H7NO)4(H2O)3]·H2O, the HoIII ion is in a slightly distorted square-anti­prismatic arrangement formed by seven O atoms from four dimethyl­formamide (DMF) mol­ecules and three water mol­ecules, and one N atom from a bridging cyanide group connected with the FeIII atom which is octa­hedrally coordinated by six cyanide groups. In the crystal, mol­ecules are held together through O—H⋯N and O—H⋯O hydrogen-bonding inter­actions to form a three-dimensional framework. Elemental analysis of one of the precursors and the crystal shows that there is a slight contamination of Fe by Ru. The Fe site displays, therefore, small substitutional disorder with site-occupancy factors Fe/Ru = 0.98:0.02. The two methyl groups of two dimethyl­formamide ligands are positionally disordered with site-occupancy factors of 0.44 (3):0.56 (3) and 0.44 (3):0.56 (3)

Oriented Zinc Oxide Nanocrystalline Thin Films Grown from Sol-Gel Solution

Zinc oxide (ZnO) is a wide band gap (~3.37 eV) semiconductor. Thin film ZnO has many attractive applications in optoelectronics and sensors. Recently, nanostructured ZnO (e.g. ZnO quantum dot) has been demonstrated as a hyperbolic material; its dielectric function has opposite signs along different crystal axes within the mid-infrared, making it an interesting material for metamaterials and nanophotonics. Conventional sputtering deposition usually leads to the formation of polycrystalline ZnO films with randomly oriented grains and rough surface. This work demonstrated a solution-based process to grow ZnO thin films with highly oriented nanocrystals. Low-temperature plasmas were employed to modulate the microstructure and optical properties of the films. Such highly anisotropic nanostructured transparent semiconductor films may lead to interesting material properties in developing new optoelectronic devices

5-Sulfanyl­idene-2H,5H-1,3-dithiolo[4,5-d][1,3]dithiol-2-one

The title mol­ecule, C4OS5, is essentially planar, with an r.m.s. deviation of 0.032 (3) Å. All the C—S single bonds are shorter than the standard Csp 3—S single-bond length, showing the π-conjugated nature of the molecule. In the crystal, molecules lie parallel to one another and pack in columns along the a axis. Short inter­molecular S⋯S contacts [3.314 (3), 3.482 (2) and 3.501 (2) Å] are observed between the columns. The angle between the two mol­ecular dipole moments in the unit cell is 39.3 (1)° and the macro-polarization vector is along the [1 0 − 1.41] direction. As a result of the high polarization and π-conjugation of the structure, the crystalline powder exhibits a second harmonic generating intensity, which is as strong as that of the urea standard powder crystals, when irradiated by a 1053 nm laser beam. The diffraction space of the crystal showed a nonmerohedral twinning

Dichlorido{N-[1-(2-pyrid­yl)ethyl­idene]ethane-1,2-diamine}copper(II)

The title complex, [CuCl2(C9H13N3)], is mononuclear and contains a five-coordinate CuII atom. The geometry of the CuII atom can be described as tetra­gonal-pyramidal derived from the calculation of the value τ = 0.102. The three N atoms of the pyridine and ethane-1,2-diamine ligands and one Cl atom belong to the basal plane and the other Cl atom represents the axial position of the pyramid. The Cu atom is displaced by 0.2599 (2) Å from the basal plane towards the axial Cl atom. In the crystal, mol­ecules are linked into chains by inter­molecular N—H⋯Cl and C—H⋯Cl hydrogen bonds

Structures and Optical Properties of Anodic Aluminum Oxide Thin Films

Low refractive index materials (n<1.3) are not common in nature. However, they are essential for antireflection coatings. In this study porous anodic aluminum oxide (AAO) on glass substrate was fabricated by electrochemical oxidation and subsequent etching. The pore size was modulated from less than 80 nm to more than 250 nm. The pore depth was controlled by electrochemical anodization and/or chemical etching time. It is challenging to effectively quantify the pore structures and the optical properties of such porous materials. Using spectroscopic ellipsometry, the authors showed that the AAO materials had tunable refractive index from 1.25 to 1.40, which is ideal for antireflection coating on glass (n=1.54). In addition, quantitative information on the AAO film porosity, profile structure, film thickness, dielectric constants, and roughness was also derived from the ellipsometry analysis. It was shown that the as-fabricated AAO film included trace amount of residual metal aluminum with an effective thickness ~0.28 nm

Surface Stabilization of O3-type Layered Oxide Cathode to Protect the Anode of Sodium Ion Batteries for Superior Lifespan

Even though the energy density of O3-type layer-structured metal oxide cathode can fully reach the requirement for large-scale energy storage systems, the cycling lifespan still cannot meet the demand for practical application once it is coupled with a non-sodium-metal anode in full-cell system. Transition metal dissolution into the electrolyte occurs along with continuous phase transformation and accelerates deterioration of the crystal structure, followed by migration and finally deposition on the anode to form a vicious circle. Surface engineering techniques are employed to modify the interface between active materials and the electrolyte by coating them with a thin layer of AlPO4 ion conductor. This stable thin layer can stabilize the surface crystal structure of the cathode material by avoiding element dissolution. Meanwhile, it can protect the anode from increased resistance by suppressing the dissolution-migration-deposition process. This technique is a promising method to improve the lifetime for the future commercialization