Design of a 2.4 GHz High-Performance Up-Conversion Mixer with Current Mirror Topology

In this paper, a low voltage low power up-conversion mixer, designed in a Chartered 0.18 μm RFCMOS technology, is proposed to realize the transmitter front-end in the frequency band of 2.4 GHz. The up-conversion mixer uses the current mirror topology and current-bleeding technique in both the driver and switching stages with a simple degeneration resistor. The proposed mixer converts an input of 100 MHz intermediate frequency (IF) signal to an output of 2.4 GHz radio frequency (RF) signal, with a local oscillator (LO) power of 2 dBm at 2.3 GHz. A comparison with conventional CMOS up-conversion mixer shows that this mixer has advantages of low voltage, low power consumption and high-performance. The post-layout simulation results demonstrate that at 2.4 GHz, the circuit has a conversion gain of 7.1 dB, an input-referred third-order intercept point (IIP3) of 7.3 dBm and a noise figure of 11.9 dB, while drawing only 3.8 mA for the mixer core under a supply voltage of 1.2 V. The chip area including testing pads is only 0.62×0.65 mm2

Direction-of-Arrival Estimation Based on Sparse Recovery with Second-Order Statistics

Traditional direction-of-arrival (DOA) estimation techniques perform Nyquist-rate sampling of the received signals and as a result they require high storage. To reduce sampling ratio, we introduce level-crossing (LC) sampling which captures samples whenever the signal crosses predetermined reference levels, and the LC-based analog-to-digital converter (LC ADC) has been shown to efficiently sample certain classes of signals. In this paper, we focus on the DOA estimation problem by using second-order statistics based on the LC samplings recording on one sensor, along with the synchronous samplings of the another sensors, a sparse angle space scenario can be found by solving an $ell_1$ minimization problem, giving the number of sources and their DOA's. The experimental results show that our proposed method, when compared with some existing norm-based constrained optimization compressive sensing (CS) algorithms, as well as subspace method, improves the DOA estimation performance, while using less samples when compared with Nyquist-rate sampling and reducing sensor activity especially for long time silence signal

Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties

Vertically aligned tin-doped indium oxide (ITO) single-crystalline nanowire arrays are epitaxially grown on ITO/yttrium stabilized zirconia substrates by vapor transport method. Vacuum electron field emission properties of the aligned ITO nanowires are investigated. The turn-on electrical field at a current density of 1 μA/cm21μA∕cm2 is about 2.0 V/μm2.0V∕μm, and the lowest vacuum for an obvious emission is 1×10−1 Pa1×10−1Pa. The good performance of field emission is attributed to the vertically aligned morphology, which has a stronger local electric field due to their orientation parallel to the electric-field direction.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87793/2/123102_1.pd