Watermarking FPGA Bitfile for Intellectual Property Protection

Intellectual property protection (IPP) of hardware designs is the most important requirement for many Field Programmable Gate Array (FPGA) intellectual property (IP) vendors. Digital watermarking has become an innovative technology for IPP in recent years. Existing watermarking techniques have successfully embedded watermark into IP cores. However, many of these techniques share two specific weaknesses: 1) They have extra overhead, and are likely to degrade performance of design; 2) vulnerability to removing attacks. We propose a novel watermarking technique to watermark FPGA bitfile for addressing these weaknesses. Experimental results and analysis show that the proposed technique incurs zero overhead and it is robust against removing attacks

Crossover from a pseudogap state to a superconducting state

On the basis of our calculation we deduce that the particular electronic structure of cuprate superconductors confines Cooper pairs to be firstly formed in the antinodal region which is far from the Fermi surface, and these pairs are incoherent and result in the pseudogap state. With the change of doping or temperature, some pairs are formed in the nodal region which locates the Fermi surface, and these pairs are coherent and lead to superconductivity. Thus the coexistence of the pseudogap and the superconducting gap is explained when the two kinds of gaps are not all on the Fermi surface. It is also shown that the symmetry of the pseudogap and the superconducting gap are determined by the electronic structure, and non-s wave symmetry gap favors the high-temperature superconductivity. Why the high-temperature superconductivity occurs in the metal region near the Mott metal-insulator transition is also explained.Comment: 7 pages, 2 figure

Correlations among superconductivity, structural instability, and band filling in Nb1-xB2 at the critical point x=0.2

We performed an extensive investigation on the correlations among superconductivity, structural instability and band filling in Nb1-xB2 materials. Structural measurements reveal that a notable phase transformation occurs at x=0.2, corresponding to the Fermi level (EF) in the pseudogap with the minimum total density of states (DOS) as demonstrated by the first-principles calculations. Superconductivity in Nb1-xB2 generally becomes visible in the Nb-deficient materials with x=0.2. Electron energy-loss spectroscopy (EELS) measurements on B K-edge directly demonstrated the presence of a chemical shift arising from the structural transformation. Our systematical experimental results in combination with theoretical analysis suggest that the emergence of hole states in the sigma-bands plays an important role for understanding the superconductivity and structural transition in Nb1-xB2.Comment: 16 pages, 4 figure

Entanglement detection via condition of quantum correlation

We develop a novel necessary condition of quantum correlation. It is utilized to construct $d$-level bipartite Bell-type inequality which is strongly resistant to noise and requires only analyses of $O(d)$ measurement outcomes compared to the previous result $O(d^{2})$. Remarkably, a connection between the arbitrary high-dimensional bipartite Bell-type inequality and entanglement witnesses is found. Through the necessary condition of quantum correlation, we propose that the witness operators to detect truly multipartite entanglement for a generalized Greenberger-Horne-Zeilinger (GHZ) state with two local measurement settings and a four-qubit singlet state with three settings. Moreover, we also propose the first robust entanglement witness to detect four-level tripartite GHZ state with only two local measurement settings

Two-photon excited photoluminescence in InGaN multi-quantum-wells structures

In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed.published_or_final_versionpublished_or_final_versio