10 research outputs found

    Chemie der laserinduzierten Abscheidung von Germanium, Silizium und Germanium-Silizium Legierungen Schlussbericht

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    1. Current situation in science and technology: In thin film technology methods are needed which allow the in situ diagnostics of film growth in the interface region with atomic resolution. 2. Aims of investigation: The aim of the present project was the diagnostics of deposition of a-Si:H, a-Ge:H, and a-Si, Ge:H in the nucleation and coalescence region with spectroscopic methods in the IR to UV spectral range. 3. Methods: As methods FTIR-transmission spectroscopy (FTIITR-TS) and spectroscopic ellipsometry (SE) were developed with monolayer resolution. For the simulation of the complex surface chemistry a stochastic reaction model was used. 4. Results: With FTIR-TS the bonding configuration of hydrogen at the surface and in the bulk was identified in situ during growth. SE allowed the determination of the surface roughness, the thickness and the optical constants of the growing film in real time. The spectroscopic results were simulated by using a combined gas phase- and surface reaction model. 5. Applications: The methods developed allow an in situ analysis of nucleation and growth in real time. (orig.)SIGLEAvailable from TIB Hannover: F97B2256+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman
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