Technology of fabrication of CdSxTe1-x solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated

METHODOLOGY OF MULTIMEDIA TECHNOLOGIES IN EDUCATION IN THE TEACHING OF MATHEMATICS

Today, multimedia technology is one of the promising areas of informatization of the educational process. Improvement of software and methodology Software, material base, as well as compulsory professional development the teaching staff sees theprospects for successful application of modern information technologies in education.Multimedia and hypermedia technologies combine a strong distribution of educational resources, they can create an environment for the formation and manifestation of communicative core competencies, primarily containing information. Multimedia and telecommunication technologies open upfundamentally new methodological approaches in the general education system

Technology of fabrication of CdS

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated