Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications

The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in telecom laser constructions on GaAs substrate. Additionally, the InGaAsN with a bandgap of 1 eV are lattice matched to both GaAs and Ge for the nitrogen and indium contents of around 3 % and 9 %, respectively. These features make this semiconductor an ideal candidate for high-efficiency multijunction solar cells (MJSCs) based on the Ge/InGaAsN/GaAs/InGaP structure. The growth technology of the GaAsN alloy-based diluted nitrides is very difficult because of the large miscibility gap between GaAs and GaN. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2097

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 mu m wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.</p

Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures

In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons

High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220-1240-nm Wavelength Range

We report on the high-temperature performance of high-power GaInNAs broad area laser diodes with different waveguide designs emitting in the 1220-1240-nm wavelength range. Large optical cavity laser structures enable a maximum continuous-wave output power of &gt;8.9 W at T = 20 degrees C with emission at 1220 nm and are characterized by low internal losses of 0.5 cm(-1) compared to 2.9 cm(-1) for the conventional waveguide structures. High-power operation up to temperatures of 120 degrees C is observed with output powers of &gt;4 W at T = 90 degrees C. This laser diode showed characteristic temperatures of T(o) = 112 K and T(1) = 378 K.</p

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed