Modeling the microstructural evolution during constrained sintering

A numerical model able to simulate solid-state constrained sintering is presented. The model couples an existing kinetic Monte Carlo (kMC) model for free sintering with a finite element model (FEM) for calculating stresses on a microstructural level. The microstructural response to the local stress as well as the FEM calculation of the stress field from the microstructural evolution is discussed. The sintering behavior of a sample constrained by a rigid substrate is simulated. The constrained sintering results in a larger number of pores near the substrate, as well as anisotropic sintering shrinkage, with significantly enhanced strain in the central upper part of the sample surface, and minimal strain at the edges near the substrate. All these features have also previously been observed experimentally.Comment: 9 pages, 7 figure

Universality of Electron Mobility in LaAlO3_3/SrTiO3_3 and bulk SrTiO3_3

Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with $N \simeq 5 \times 10^{18}~\rm{cm^{-3}}$ background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons $n_{3D} < N$ background impurities determine the electron scattering. Thus, when $n_{3D} < N$ it is natural to see in LAO/STO the same mobility as in the bulk. On the other hand, in the bulk samples with $n_{3D} > N$ the mobility collapses because scattering happens on $n_{3D}$ intentionally introduced donors. For LAO/STO the polar catastrophe which provides electrons is not supposed to provide equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO the polar catastrophe model should be revisited.Comment: 4 pages and 1 figur

Evidence for lattice-polarization-enhanced field effects at the SrTiO₃-based heterointerface

Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensional electron liquid between two insulating oxides. For the LaAlO(3)/SrTiO(3) (LAO/STO) interface, such gating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneous application of gate field and illumination light. Herein, by monitoring the discharging process upon removing the gate field, we give firm evidence for the occurrence of this lattice polarization at the amorphous-LaAlO(3)/SrTiO(3) interface. Moreover, we find that the lattice polarization is accompanied with a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarization process by accelerating the field-induced lattice expansion. The present work demonstrates the great potential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

The spinel/perovskite heterointerface $\gamma$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.Comment: Accepted as Rapid Communications in Physical Review