Two sub-band conductivity of Si quantum well

We report on two sub-band transport in double gate SiO$_2$-Si-SiO$_2$ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total density is adjusted by gate voltages between $\sim 0.7\times 10^{16}$ $-3.0\times 10^{16}$ m$^{-2}$. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. Close to bi-layer/second sub-band threshold the non-monotonic behavior is interpreted to arise from scattering from localized band tail electrons.Comment: Presented at MSS12 conference July 10-15, 2005 Albuquerque, New Mexico, USA. Post-deadline paper, Poster PA2-293. Version 2: typos corrected, few clarifications added in the text, summary shortened, title removed from Ref.

Acoustic Phonon Tunneling and Heat Transport due to Evanescent Electric Fields

The authors describe how acoustic phonons can directly tunnel through vacuum and, therefore, transmit energy and conduct heat between bodies that are separated by a vacuum gap. This effect is enabled by introducing a coupling mechanism, such as piezoelectricity, that strongly couples electric field and lattice deformation. The electric field leaks into the vacuum as an evanescent field, which leads to finite solid-vacuum-solid transmission probability. Due to strong resonances in the system some phonons can go through the vacuum gap with (or close to) unity transmission, which leads to significant thermal conductance and heat flux.Comment: main text, 3 figures, supplementary materia

Flux-driven Josephson parametric amplifier for sub-GHz frequencies fabricated with side-wall passivated spacer junction technology

We present experimental results on a Josephson parametric amplifier tailored for readout of ultra-sensitive thermal microwave detectors. In particular, we discuss the impact of fabrication details on the performance. We show that the small volume of deposited dielectric materials enabled by the side-wall passivated spacer niobium junction technology leads to robust operation across a wide range of operating temperatures up to 1.5 K. The flux-pumped amplifier has gain in excess of 20 dB in three-wave mixing and its center frequency is tunable between 540 MHz and 640 MHz. At 600 MHz, the amplifier adds 105 mK $\pm$ 9 mK of noise, as determined with the hot/cold source method. Phase-sensitive amplification is demonstrated with the device

Dielectric losses in multi-layer Josephson junction qubits

We have measured the excited state lifetimes in Josephson junction phase and transmon qubits, all of which were fabricated with the same scalable multi-layer process. We have compared the lifetimes of phase qubits before and after removal of the isolating dielectric, SiNx, and find a four-fold improvement of the relaxation time after the removal. Together with the results from the transmon qubit and measurements on coplanar waveguide resonators, these measurements indicate that the lifetimes are limited by losses from the dielectric constituents of the qubits. We have extracted the individual loss contributions from the dielectrics in the tunnel junction barrier, AlOx, the isolating dielectric, SiNx, and the substrate, Si/SiO2, by weighing the total loss with the parts of electric field over the different dielectric materials. Our results agree well and complement the findings from other studies, demonstrating that superconducting qubits can be used as a reliable tool for high-frequency characterization of dielectric materials. We conclude with a discussion of how changes in design and material choice could improve qubit lifetimes up to a factor of four.Comment: 10 pages, 4 figures,and 4 table

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.Comment: 5 pages, 4 figure

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characterization of the devices reveal noise equivalent power of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The bolometers operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.Comment: 11 pages, 3 figure

Traceable Coulomb Blockade Thermometry

We present a measurement and analysis scheme for determining traceable thermodynamic temperature at cryogenic temperatures using Coulomb blockade thermometry. The uncertainty of the electrical measurement is improved by utilizing two sampling digital voltmeters instead of the traditional lock-in technique. The remaining uncertainty is dominated by that of the numerical analysis of the measurement data. Two analysis methods are demonstrated: numerical fitting of the full conductance curve and measuring the height of the conductance dip. The complete uncertainty analysis shows that using either analysis method the relative combined standard uncertainty (k = 1) in determining the thermodynamic temperature in the temperature range from 20 mK to 200 mK is below 0.5 %. In this temperature range, both analysis methods produced temperature estimates that deviated from 0.39 % to 0.67 % from the reference temperatures provided by a superconducting reference point device calibrated against the Provisional Low Temperature Scale of 2000.Comment: 11 page