Characterization of linewidth variation on 248- and 193-nm exposure tools

Proceedings of S P I E - the International Society for OpticalThe line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary, attenuated PSM with assist features and alternating PSM reticles. Despite the fact that the 193 nm tool has a lower NA and that the data was generated using a binary reticle, the 193 nm lithographic process allows for the line-width values to be pushed lower than previously achieved with 248 nm lithographic processes. The 3-sigma values from 4000 electrical linewidth measurements per wafer (160 measurements per 25*25 mm field, 25 fields per wafer) were calculated for different mask features. The 193 nm process was capable of reaching line-widths needed for future generations of advance logic chips. Compared to the 193 nm process utilizing a binary reticle, only the 248 nm processes utilizing either an attenuated PSM with assist features or an alternating PSM reticle had similarly low line-width variation. The 248 nm processes utilizing a binary reticle had higher line-width variation even at larger poly gate conductor line-widths.published_or_final_versio

Nanoimprinting Techniques for Large-Area Three-Dimensional Negative Index Metamaterials with Operation in the Visible and Telecom Bands

We report advances in materials, designs, and fabrication schemes for large-area negative index metamaterials (NIMs) in multilayer “fishnet” layouts that offer negative index behavior at wavelengths into the visible regime. A simple nanoimprinting scheme capable of implementation using standard, widely available tools followed by a subtractive, physical liftoff step provides an enabling route for the fabrication. Computational analysis of reflection and transmission measurements suggests that the resulting structures offer negative index of refraction that spans both the visible wavelength range (529–720 nm) and the tele­communication band (1.35–1.6 μm). The data reveal that these large (>75 cm²) imprinted NIMs have predictable behaviors, good spatial uniformity in properties, and figures of merit as high as 4.3 in the visible range