Table 2. Pinning

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C ratin

Symbol Parameter Conditions Min Max Unit

Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT186A (TO-220F)) plastic package

Symbol Parameter Conditions Min Max Unit

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usin

Bluetooth NXP Semiconductors

NPN silicon germanium microwave transistor for high speed, low noise applications in

1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 complian

1.3 Applications 12 V Automotive systems

1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °

Static characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 1.4 Quick reference dat

1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasti

CAUTION

Table 1. Typical performance Typical RF performance at Tcase =25°C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns