Магнетронне розпилення при постійному тоці зворотного контакту Mo для тонкоплівкових сонячних елементів з халькопіриту

In present work, Mo films were deposited on corning glass substrates using DC-Magnetron sputtering. Influence of DC sputtering power on electrical, structural, morphological, optical and topological properties has been investigated by using Hall effect, Х-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), UV-Visible spectroscopy, non-contact-atomic force microscopy (NC-AFM) etc. It is observed that electrical resistivity and adhesion of Mo thin film were strongly affected by DC power. The synthesized Mo films were of few micrometer thicknesses (~ 0.9-1.6 m) with deposition rate in the range of 32-57 nm/min. Cross-hatch cut and Scotch tape adhesion test showed that all Mo films have good adhesion to the substrate. XRD analysis showed that as-deposited Mo films have preferred orientation in (110) direction and with enhancement in its crystallinity and average grain size with an increase in the DC sputtering power. Furthermore, XRD analysis showed that the Mo films deposited at DC sputtering power 300 W exhibit tensile strain, while deposited at DC sputtering power 350 W – exhibit compressive strain. FE-SEM analysis showed that all Mo films are dense, homogeneous and free of flaws and cracks. In the visible range of the spectrum, an increase in an average reflection of Mo films with DC sputtering power was observed by UV-Visible spectroscopy analysis. NC-AFM characterization revealed that the surface roughness of the films increases with an increase in the DC sputtering power. Hall effect measurements showed that the electrical resistivity of Mo films decreases while charge carrier mobility show increasing trend with increase in DC sputtering power. The obtained results suggest that as-synthesized Mo thin films with DC power 300 W have potential application as a back contact material for chalcopyrite compounds based on solar cells due to good adhesion and low electrical resistivity.В даній роботі, плівки Mo осаджувалися на підкладках із скла з використанням магнетронного розпилення при постійному струмі. Досліджено вплив потужності розпилення на електричні, структурні, морфологічні, оптичні та топологічні властивості за допомогою ефекту Холла, рентгенівської дифракції, автоелектронної скануючої мікроскопії, спектроскопії в УФ та видимої областях, неконтактної атомно-силової мікроскопії, тощо. Виявлено, що потужність постійного струму суттєво впливає на електричний опір і адгезію тонкої плівки Мо. Синтезовані плівки Mo мали товщину декількох мікрометрів (~ 0.9-1.6 мкм) зі швидкістю осадження в діапазоні 32-57 нм/хв. Випробування показали, що всі плівки Mo мають гарну адгезію до підкладки. Рентгено-дифракційний аналіз показав, що свіжосконденсовані плівки Mo мають переважну орієнтацію (110) і поліпшення її кристалічності та середнього розміру зерна зі збільшенням потужності розпилення при постійному струмі. Крім того, рентгенодифракційний аналіз показав, що плівки Mo, нанесені при потужності розпилення 300 Вт, демонструють деформацію розтягування, в той час як нанесені при потужності розпилення 350 Вт демонструють деформацію стиску. Результати автоелектронної скануючої мікроскопії показали, що всі плівки Mo щільні, однорідні і вільні від дефектів і тріщин. При спектроскопічному аналізі спостерігалося збільшення середнього коефіцієнту відбиття плівок Mo з потужністю розпилення спостерігалося у видимому діапазоні спектра. Неконтактна атомно-силова мікроскопія показала, що шорсткість поверхні плівок збільшується зі збільшенням потужності розпилення при постійному струмі. Вимірювання ефекту Холла показало, що електричний опір плівок Mo зменшується, а рухливість носіїв заряду збільшується з ростом потужності розпилення при постійному струмі. Отримані результати свідчать про те, що синтезовані тонкі плівки Мо з потужністю постійного струму 300 Вт мають перспективу застосування як матеріалу зворотного контакту для сполук халькопіритів на основі сонячних елементів завдяки хорошій адгезії та низькому електричному опору

Soft annealing effect on the properties of sputter grown Cu2ZnSnS4 (CZTS) thin films for solar cell applications

In present study, CZTS films were fabricated using 2 different processes and their properties have been compared. The first is a 2-stage process which includes deposition of CZT followed by sulfurization and the second is a 3-stage process which includes deposition of identical CZT, soft annealing (pre-heating) and sulfurization. Structural, morphological, optical and compositional properties of CZTS films are investigated by XRD, Raman spectroscopy, FE-SEM, UV–Visible spectroscopy, EDS and photoresponse measurements. Structural analysis revealed that films prepared by both processes have polycrystalline kesterite-CZTS structure and exhibit prefered orientation along (1 1 2) direction. It has been observed that soft annealing temperature in 3-stage process significantly improve the crystal quality of CZTS films. Surface morphology of films sulfurized at 550 °C shows a uniform and compact micrograin (∼0.31 µm) without cracks. The soft annealing temperature significantly improves micrograin size (∼0.49 µm) and compactness of CZTS films. UV–Visible spectroscopy showed that the band gap of all CZTS films is in optimal range. The CZTS films fabricated by 3-stage process, exhibits high photocurrent response under intermittent visible-light irradiation, implying that they can useful as an absorber layer in solar cells

Soft annealing effect on the properties of sputter grown Cu2ZnSnS4 (CZTS) thin films for solar cell applications

In present study, CZTS films were fabricated using 2 different processes and their properties have been compared. The first is a 2-stage process which includes deposition of CZT followed by sulfurization and the second is a 3-stage process which includes deposition of identical CZT, soft annealing (pre-heating) and sulfurization. Structural, morphological, optical and compositional properties of CZTS films are investigated by XRD, Raman spectroscopy, FE-SEM, UV–Visible spectroscopy, EDS and photoresponse measurements. Structural analysis revealed that films prepared by both processes have polycrystalline kesterite-CZTS structure and exhibit prefered orientation along (1 1 2) direction. It has been observed that soft annealing temperature in 3-stage process significantly improve the crystal quality of CZTS films. Surface morphology of films sulfurized at 550 °C shows a uniform and compact micrograin (∼0.31 µm) without cracks. The soft annealing temperature significantly improves micrograin size (∼0.49 µm) and compactness of CZTS films. UV–Visible spectroscopy showed that the band gap of all CZTS films is in optimal range. The CZTS films fabricated by 3-stage process, exhibits high photocurrent response under intermittent visible-light irradiation, implying that they can useful as an absorber layer in solar cells

Environmentally stable lead-free cesium bismuth iodide (Cs3Bi2I9) perovskite: Synthesis to solar cell application

In this paper, we synthesized lead-free cesium bismuth iodide (Cs3Bi2I9) perovskite films by solution process using one-step spin-coating technique. Formation of Cs3Bi2I9 perovskite was confirmed by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy analysis. The XRD analysis showed that all Cs3Bi2I9 perovskite films were polycrystalline in nature, with hexagonal crystal structure and preferred-orientation along (006) direction. The environmental stability of Cs3Bi2I9 perovskite was confirmed by XRD analysis and UV–visible spectroscopy. Multiple XRD and UV–Vis spectra taken after long time spans revealed the stable nature of Cs3Bi2I9 perovskite films. The UV–visible spectroscopy and photoluminescence analysis showed that the perovskite films absorbed strongly in the visible region and had an optical band gap of ∼2.1 eV. Surface morphology of Cs3Bi2I9 perovskite over the entire substrate surface was investigated using scanning electron microscopy. Thermo-gravimetric analysis showed that Cs3Bi2I9 perovskite was thermally stable up tõ420 °C. Finally, solar cells fabricated using Cs3Bi2I9 perovskite material showed maximum power conversion efficiency (PCE) of 0.17%, with short circuit current density of 1.43 mA/cm2, open circuit voltage of 0.37 V and fill factor of 32%. Applying compositional engineering and optimizing the device structure should further improve the PCE. These results are a significant step toward fabrication of Cs3Bi2I9 perovskite-based solar cells

Environmentally stable lead-free cesium bismuth iodide (Cs3Bi2I9) perovskite: Synthesis to solar cell application

In this paper, we synthesized lead-free cesium bismuth iodide (Cs3Bi2I9) perovskite films by solution process using one-step spin-coating technique. Formation of Cs3Bi2I9 perovskite was confirmed by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy analysis. The XRD analysis showed that all Cs3Bi2I9 perovskite films were polycrystalline in nature, with hexagonal crystal structure and preferred-orientation along (006) direction. The environmental stability of Cs3Bi2I9 perovskite was confirmed by XRD analysis and UV–visible spectroscopy. Multiple XRD and UV–Vis spectra taken after long time spans revealed the stable nature of Cs3Bi2I9 perovskite films. The UV–visible spectroscopy and photoluminescence analysis showed that the perovskite films absorbed strongly in the visible region and had an optical band gap of ∼2.1 eV. Surface morphology of Cs3Bi2I9 perovskite over the entire substrate surface was investigated using scanning electron microscopy. Thermo-gravimetric analysis showed that Cs3Bi2I9 perovskite was thermally stable up tõ420 °C. Finally, solar cells fabricated using Cs3Bi2I9 perovskite material showed maximum power conversion efficiency (PCE) of 0.17%, with short circuit current density of 1.43 mA/cm2, open circuit voltage of 0.37 V and fill factor of 32%. Applying compositional engineering and optimizing the device structure should further improve the PCE. These results are a significant step toward fabrication of Cs3Bi2I9 perovskite-based solar cells

Probing the effect of selenium substitution in kesterite-Cu2ZnSnS4 nanocrystals prepared by hot injection method

In this paper, we report the effect of sulfur (S) substitution with selenium (Se) in CZTS nanocrystals prepared by hot injection method. The formation of kesterite-copper zinc tin sulfide (Cu2ZnSnS4, CZTS) and copper zinc tin selenide (Cu2ZnSnSe4, CZTSe) nanocrystals is confirmed by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM) analysis. The XRD, TEM and atomic force microscopy (AFM) analysis shows an overall increase in average crystallite size upon Se substitution. AFM images revealed an increase in root mean square surface roughness (Sq) and average surface roughness (Sa) when S in CZTS is replaced by Se. The substitution of S by Se in host CZTS narrows the optical band gap from 1.56 to 1.03 eV. The ultraviolet photoelectron spectroscopy (UPS) analysis shows shift in valence band and conduction band edge in CZTSe compared to CZTS. The photocurrent density measurement in synthesized CZTSe thin films is ~ 4 to 5 times higher than CZTS thin films. The obtained results show that CZTSe can be a promising candidate as absorber material in photovoltaic applications

Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

Indium selenide (γ-In2Se3) films were prepared using RF magnetron sputtering. Influence of deposition time on structural, optical, morphological, and photoelectrochemical (PEC) performance was studied. Formation of γ-In2Se3 is confirmed by low angle XRD, Raman spectroscopy, and XPS analysis. Surface morphology investigated using FE-SEM shows that γ-In2Se3 films are uniform and have a dense grain structure, without cracks and holes. Optical properties show that γ-In2Se3films absorb mainly in the UV region, and the bandgap energy decreases from 2.81 to 2.27 eV as deposition duration increases. Conduction and valance band-edge potential values show that γ-In2Se3 films are suitable for photoelectrochemical hydrogen evolution. PEC activity of γ-In2Se3 photoanodes was evaluated using linear sweep voltammetry (LSV), and there was an increase in photocurrent density with deposition time. Electron impedance spectroscopy (EIS) analysis revealed that γ-In2Se3 photoanodes had high charge transfer resistance, and it decreases with deposition time, which leads to improved PEC performance. Investigation of Mott Schottky's (MS) results shows a shifting of flat band potential towards negative potential, suggesting movement of fermi level towards conduction band edge. Carrier density increases from 3.7 × 1019 cm−3 to 8.9 × 1020 cm−3 and depletion layer width of γ-In2Se3 photoanodes are found in the range of ~ 2.67–9.10 nm. The gradual increase in electron lifetime indicates a decrease in the recombination rate of photo-generated charge carriers. An increase in time-dependent photocurrent density reveals that γ-In2Se3 films have effective electron–hole separation. Our work demonstrates that γ-In2Se3 can be a probable candidate for PEC water splitting and opto-electronic applications

Highly stable and Pb-free bismuth-based perovskites for photodetector applications

Herein, we report the synthesis of highly stable, Pb-free bismuth iodide (BiI3 or BI), stoichiometric methylammonium bismuth iodide [(CH3NH3)3Bi2I9 or MA3Bi2I9 or s-MBI] and non-stoichiometric methylammonium bismuth iodide [(CH3NH3)2BiI5 or MA2BiI5 or Ns-MBI] perovskite thin films for photodetector applications. These films are synthesized at room temperature by a single step solution process spin coating method. The structural, optical, and morphological properties of these films were investigated using different characterization techniques such as XRD, Raman spectroscopy, FE-SEM, UV-Visible spectroscopy, etc. Formation of BI, s-MBI and Ns-MBI thin films is confirmed by XRD and Raman spectroscopy measurements. XRD analysis reveals that BI has a hexagonal crystal structure and a P63/mmc hexagonal space group for s-MBI and Ns-MBI. The optical properties of BI thin films show a high absorption coefficient (∼104 cm−1) and a band gap of ∼1.74 eV. Similarly, s-MBI films have a high absorption coefficient (∼103 cm−1) and an indirect band gap of ∼1.8 eV. Moving from s-MBI to Ns-MBI, the value of absorption coefficient is ∼103 cm−1 and the band gap corresponds to ∼2 eV. Finally, photodetectors based on the synthesized BI, s-MBI and Ns-MBI perovskites have been directly fabricated on FTO substrates. All photodetectors exhibited highly stable photo-switching behaviour along with excellent photoresponsivity and detectivity, with a fast response and recovery time. Our work demonstrates that Pb-free BI, s-MBI and Ns-MBI perovskites have great potential in the future for realizing stable photodetectors

Highly stable and Pb-free bismuth-based perovskites for photodetector applications

Herein, we report the synthesis of highly stable, Pb-free bismuth iodide (BiI3 or BI), stoichiometric methylammonium bismuth iodide [(CH3NH3)3Bi2I9 or MA3Bi2I9 or s-MBI] and non-stoichiometric methylammonium bismuth iodide [(CH3NH3)2BiI5 or MA2BiI5 or Ns-MBI] perovskite thin films for photodetector applications. These films are synthesized at room temperature by a single step solution process spin coating method. The structural, optical, and morphological properties of these films were investigated using different characterization techniques such as XRD, Raman spectroscopy, FE-SEM, UV-Visible spectroscopy, etc. Formation of BI, s-MBI and Ns-MBI thin films is confirmed by XRD and Raman spectroscopy measurements. XRD analysis reveals that BI has a hexagonal crystal structure and a P63/mmc hexagonal space group for s-MBI and Ns-MBI. The optical properties of BI thin films show a high absorption coefficient (∼104 cm−1) and a band gap of ∼1.74 eV. Similarly, s-MBI films have a high absorption coefficient (∼103 cm−1) and an indirect band gap of ∼1.8 eV. Moving from s-MBI to Ns-MBI, the value of absorption coefficient is ∼103 cm−1 and the band gap corresponds to ∼2 eV. Finally, photodetectors based on the synthesized BI, s-MBI and Ns-MBI perovskites have been directly fabricated on FTO substrates. All photodetectors exhibited highly stable photo-switching behaviour along with excellent photoresponsivity and detectivity, with a fast response and recovery time. Our work demonstrates that Pb-free BI, s-MBI and Ns-MBI perovskites have great potential in the future for realizing stable photodetectors

Realization of electrochemically grown a-Fe2O3 thin films for photoelectrochemical water splitting application

Hematite ferric oxide (a-Fe2O3) based photoanode has emerged as a potential candidate for water splitting application due to the high absorption coefficient in the visible region and favorable band alignment. In the present work, a-Fe2O3 thin film photoanodes were fabricated using a cost-effective and straightforward electrodeposition technique. The crystal structure, phase purity, elemental composition, and formation of a-Fe2O3 were confirmed by x-ray diffraction (XRD), photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, energy-dispersive x-ray spectroscopy (EDS), and scanning electron microscopy (SEM). The bandgap calculated from the absorption spectrum from UV-visible analysis of a-Fe2O3 exhibits significant absorption in the visible region. The a-Fe2O3 photoanodes were further characterized for their photoelectrochemical (PEC) properties along with electrochemical impedance spectroscopy (EIS) analysis. Furthermore, XRD, SEM, and Fourier transform infrared (FTIR) spectroscopy investigations were performed after photoelectrochemical measurement to ensure the stability of photoanodes. Also, the prepared photoanode is highly stable against a large range of pH conditions, and no photobleaching was observed for up to 30 min. Furthermore, a significant enhancement in photocurrent conversion efficiency with optimum film thickness was observed upon light illumination. A maximum photon conversion efficiency of 1.44 % was obtained with a photocurrent density of 6.25 mA/cm2 for 1 V vs. SCE under simulated solar light