Residual Stresses in Layered Manufacturing

Layered Manufacturing processes accumulate residual stresses during materialbuildup. These stresses may cause part warping and layer delamination. This paper presents work done on investigating residual stress accumulation andp(i,rt distortion of Layered Manufactured artifacts. A simple analyticaLmodel was developed and used to determine how the number of layers and the layer thickness influences part warping. Resllits show that thin layers produce lower part deflection as compared with depositing fewer and thicker layers. In addition to the analytical work, a finite element model wasdeveloped and used to illvestigate the deposition pattern's influence on. the part deflection. Finite element model and corresponding experimental analysis showed that the geometry of the deposition pattern significantly affects the resulting part distortion. This finite element model was also used to investigate an inter-layer surface defect,. known as the Christmas Thee Step, that is associated with Shape Deposition Manufacturing. Results indicate that the features of this defect are influenced only by the material deposited close. to the part·surface and the particular material deposited. The step is not affected by the deposition pattern.Mechanical Engineerin

Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits

A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly influenced by the dot geometry so the spin may be more polarized than the emitted light would naively suggest. We have calculated carrier polarization-dependent optical matrix elements using 8-band strain-dependent k.p theory for InAs/GaAs self-assembled quantum dots (SAQDs) for electron and hole spin injection into a range of quantum dot sizes and shapes, and for arbitrary emission directions. The observed circular polarization does not depend on whether the injected spin-polarized carriers are electrons or holes, but is strongly influenced by the SAQD geometry and emission direction. Calculations for typical SAQD geometries with emission along [110] show light that is only ~5% circularly polarized for spin states that are 100% polarized along [110]. Therefore observed polarizations [Chye et al. PRB 66, 201301(R)] of ~1% imply a spin polarization within the dot of ~20%. We also find that measuring along the growth direction gives near unity conversion of spin to photon polarization, and is the least sensitive to uncertainties in SAQD geometry.Comment: 4 pages, 6 figure

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of \rho with temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance \rho(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than \rho(T).Comment: 4 pages, 5 figures. References update

A Mesoscopic Quantum Eraser

Motivated by a recent experiment by Buks et al. [Nature 391, 871 (1998)] we consider electron transport through an Aharonov-Bohm interferometer with a quantum dot in one of its arms. The quantum dot is coupled to a quantum system with a finite number of states acting as a which-path detector. The Aharonov-Bohm interference is calculated using a two-particle scattering approach for the joint transitions in detector and quantum dot. Tracing over the detector yields dephasing and a reduction of the interference amplitude. We show that the interference can be restored by a suitable measurement on the detector and propose a mesoscopic quantum eraser based on this principle.Comment: 7 pages, 2 figures, to appear in Europhys. Lett., uses EuroPhys.sty and EuroMacro.tex (included

Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"

Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].Comment: 2 page

Polarized Magnetic Wire Induced by Tunneling Through a Magnetic Impurity

Using the zero mode method we compute the conductance of a wire consisting of a magnetic impurity coupled to two Luttinger liquid leads characterized by the Luttinger exponent $\alpha(\leq 1)$. We find for resonance conditions, in which the Fermi energy of the leads is close to a single particle energy of the impurity, the conductance as a function of temperature is $G \sim \frac{e^2}{h} (T/T_F)^{2(\alpha-2)}$, whereas for off-resonance conditions the conductance is $G \sim \frac{e^2}{h} (T/T_F)^{2(\alpha-1)}$. By applying a gate voltage and/or a magnetic field, one of the spin components can be in resonance while the other is off-resonance causing a strong asymmetry between the spin-up and spin-down conductances.Comment: 8 pages, submitted to PR