Nanowire-based active matrix backplanes for the control of large area X-ray imagers

International audienceIn digital X-ray sensors, pixel complexity is limited by the instabilities of amorphous silicon transistors or by the lack of homogeneity of their polycrystalline silicon counterparts. Here, we present a novel approach to the fabrication of thin-film transistors, based on the use of silicon nanowires grown in porous alumina templates. Transistors made from silicon nanowires are essentially studied for the post-MOS era and they exhibit excellent transport characteristics. The technology we propose is simple, as it only employs chemical vapour deposition processes for transistor fabrication. Also, as far as active matrix fabrication is concerned, a small number of masks is needed and we present a 5 mask process for the fabrication of an X-ray panel with pixel amplification

Synthesis of multi-walled carbon nanotubes by combining hot-wire and dc plasma-enhanced chemical vapor deposition

International audienceMulti-walled carbon nanotubes (MWCNTs) have been grown on 7 nm Ni-coated substrates consisting of crystalline silicon covered with a thin layer (10 nm) of TiN, by combining hot-wire chemical vapor deposition (HWCVD) and direct current plasma-enhanced chemical vapor deposition (dc PECVD), at 620 °C. Acetylene (C2H2) gas is used as the carbon source and ammonia (NH3) and hydrogen (H2) are used either for dilution or etching. The carbon nanotubes range from 20 to 100 nm in diameter and 0.3 to 5 μm in length, depending on growth conditions: plasma intensity, filament current, pressure, C2H2, NH3, H2 flow rates, C2H2/NH3 and C2H2/H2 mass flow ratios. By combining the HWCVD and the dc PECVD processes, uniform growth of oriented MWCNTs was obtained, whereas by using only the HWCVD process, tangled MWCNTs were obtained. By patterning the nickel catalyst, with the use of the HW dc PECVD process, uniform arrays of nanotubes have been grown as well as single free-standing aligned nanotubes, depending on the catalyst patterning (optical lithography or electron-beam lithography). In the latter case, electron field emission from the MWCNTs was obtained with a maximum emission current density of 0.6 A/cm2 for a field of 16 V/μm

Catalyst faceting during graphene layer crystallization in the course of carbon nanofiber growth

International audienceThe low temperature catalytic growth of multiwall carbon nanotubes (MWCNTs) rests on the continuous nucleation and growth of graphene layers at the surface of crystalline catalystparticles. Here, we study the atomic mechanisms at work in this phenomenon, by observing the growth of such layers in situ in the transmission electron microscope, in the case of iron-based catalysts. Graphene layers, parallel to the catalyst surface, appear by a mechanism of step flow, where the atomic layers of catalyst are "replaced" by graphene planes. Quite remarkably, catalyst facets systematically develop while this mechanism is at work. We discuss the origin of faceting in terms of equilibrium particle shape and graphene layer nucleation. Step bunching due to impeded step migration, in certain growth conditions, yields characteristic catalyst nail-head shapes. Mastering themechanisms of faceting and step bunching could open up the way to tailoring the structure of low temperature-grown MWCNTs, e.g. with highly parallel carbon walls and, ultimately, with controlled structure and chirality

High-quality Single-walled carbon nanotubes synthesis by hot filament CVD on Ru nanoparticule catalyst

International audienceWe investigated the single-walled carbon nanotubes (SWCNTs) growth on Ru nanoparticle catalyst via hot filament assisted chemical vapor deposition (HFCVD) with two independent W filaments for the carbon precursor (methane) and the hydrogen dissociation respectively. The Ru nanoparticles were obtained following a two-step strategy. At first the growth substrate is functionalized by silanisation, then a self assembly of a ruthenium porphyrin complex monolayer on pyridine-functionalized metal oxide substrates. We have studied the impact of the filaments power and we optimized the SWCNTs growth temperature. The as grown SWCNTs were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. It was found that the quality, density and the diameter of SWCNTs depends on the filament and growth temperature. Results of this study can be used to improve the understanding of the growth of SWCNTs by HFCVD

Laterally organized carbon nanotube arrays based on hot-filament chemical vapor deposition

International audienceLateral porous anodic alumina (PAA) templates were used to organize carbon nanotubes (CNTs) grown by a hot-filament assisted chemical vapor deposition (HFCVD) process. For the CNT growth, we used a modified "home-made" HFCVD system with two independently powered filaments which are fitted respectively on the methane (CH4) gas line, which serves as a carbon precursor and on the hydrogen (H2) gas line, which acts as an etching agent for the parasitic amorphous carbon. Various activation powers of the hot filaments were used to directly or indirectly decompose the gas mixtures at relatively low substrate temperatures. A parametric study of the HFCVD process has been carried out for optimizing the confined CNTs growth inside the lateral PAA templates

About the step-flow mechanism at the origin of graphene crystallisation at the surface of catalysts

The nucleation and growth of multiwall carbon nanotubes (MWCNTs) at the surface of crystalline iron-based catalysts are studied by in situ annealing and high-resolution transmission electron microscopy. Graphene planes, parallel to the catalyst surface, appear by a mechanism of step flow, where the atomic layers of catalyst are "replaced" by graphene layers. More interestingly, as the catalyst particles have curved or poly-faceted surfaces, those catalyst atomic layers correspond to no definite atomic plane. The step height may thus vary along a given step flow process. Step bunching due to impeded step migration, in certain growth conditions, yields characteristic catalyst nail-head shapes. Mastering this mechanism opens up the way to tailor the structure of MWCNTs, e.g. with highly parallel carbon walls

Growth mechanisms of carbon nanotrees with branched carbon nanofibers synthesized by plasma-enhanced chemical vapour deposition

International audienceY- and comb-type carbon nanotrees formed from branched carbon nanofibres grown by plasma-enhanced chemical vapour deposition were studied by transmission electron microscopy. Different growth mechanisms are proposed for the two types of nanotrees based on the observed and reconstituted dynamic transformations of the catalyst particles during synthesis. However, the splitting of the larger catalyst particles is required for both kinds of nanotrees, whatever the involved growth mechanism. The carbon nanotrees are well crystallized and connections of the branches are continuous, which may be interesting for future applications in nanoelectronic devices and also composite materials

Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon nanofibers

8 pagesInternational audienceVertically aligned multi-walled carbon nanofibers (CNFs) were grown by plasma-enhanced chemical vapor deposition with Ni catalysts on the top of nanofibers. Transmission electron microscopy was used to study the morphology and crystallography of Ni catalysts, which are essential for the nucleation and growth of CNFs. A model for the faceted shape of Ni catalytic particles is proposed. It is shown that the exposed polyhedral surfaces of Ni catalytic particles for vertically aligned CNFs are composed of {111}, {110}, and {100}, a faceting that appears to be characteristic of the growth atmosphere

An electrochemical and structural investigation of silicon nanowires as negative electrode for Li-ion batteries

International audienceThe electrochemical and structural responses of silicon nanowires deposited by chemical vapor deposition are investigated. Transmission electron microscopy and X-ray diffraction experiments show the electrochemical lithiation of SiNWs is not a quantitative process in good agreement with cycling experiments performed as a function of cycling limits. The SiNWs are not deeply lithiated as revealed by TEM micrographs. Our results suggest the existence of two well-defined lithiation steps, first at ∼0.2 V into amorphous silicon and then into crystalline silicon at ∼0.1 V. Cycling SiNWs above 100 mV avoid the lithiation of c-Si which preserves the silicon 3-D architecture and results in good cycling performances. A stable capacity value of ∼500 mAh g−1 is achieved over at least 50 cycles