Etude de la compatibilité WDM d'un régénérateur tout-optique 2R basé sur un module absorbant saturable à 8 canaux

session Affiches [P54]National audienceDans cet article, nous présentons pour la première fois un module absorbant saturable pigtailisé avec 8 fibres indépendantes. Nous montrons expérimentalement ses qualités pour une régénération 2R à 42.6 Gbit/s et son accordabilité en longueur d'onde

Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

Two GaAs(200 nm)/Sc0.2Yb0.8As(2 nm)/GaAs heterostructures have been grown by molecular beam epitaxy; the first one onto a (001) nominal surface, and the second one onto a (001) vicinal surface (4° off towards (111)Ga, tilt axis [-110]). The structures have been characterized by reflection high energy electron diffraction, Rutherford backscattering analysis and transmission electron microscopy. The Sc0.2Yb0.8As layer is matched to GaAs and grows in a two-dimensional mode, leading to a high crystalline quality. But the GaAs overlayer contains a high density of planar defects, due to its three-dimensional growth. For the two structures, the nature of the faults, their density, and their distribution are compared. The quality of the GaAs overlayer is improved through growth on a vicinal surface. This conclusion is discussed with respect to the particular growth conditions and resulting morphology of the epilayers.Nous avons réalisé la croissance de 2 hétérostructures GaAs (200 nm)/Sc 0,2Yb0,8As (2 nm)/GaAs par épitaxie par jets moléculaires; la première sur une surface nominale (001), et la seconde sur une surface vicinale ((001), 4°vers (111)Ga, charnière [-110]). Les structures ont été caractérisées par diffraction en réflexion d'électrons de haute énergie, rétrodiffusion d'ions et microscopie électronique en transmission. La couche de Sc0,2Yb0,8As est accordée à GaAs; sa croissance bidimensionnelle conduit à une très bonne qualité cristalline. Au contraire, le caractère tridimensionel de la réépitaxie de GaAs génère une grande densité de défauts plans. Pour les deux structures, nous avons comparé la nature des défauts, leur densité et leur répartition. Le choix d'une surface vicinale améliore la qualité de la réépitaxie de GaAs, et cette conclusion est discutée par rapport aux conditions de croissance particulières et à la morphologie des couches épitaxiées

Cascadability and wavelength tunability assessment of a 2R regeneration device based on a 8 channel saturable absorber module

session " Postdeadline Session A " [PDP1]International audienceWe report the first pigtailed chip saturable absorber which has been implemented with 8 independent fibers using a cost effective coupling technique. The cascadability and wavelength tunability assessment have been experimentally demonstrated at 42.6 Gbit/s

WDM Compatible 2R and 3R Regeneration based on Saturable Absorber

poster [B-38]International audienceA saturable absorber (SA) based on a vertical micro-cavity is of great interest for optical regeneration. In this paper, we report on the high potential of the SA for optical regeneration, both 2R and 3R regenerations are performed. A pigtailed chip SA with 8 independent fibres is assessed for the first time. We demonstrate experimentally the cascadability and WDM compatibility of this 2R module in a recirculation loop at 42.6 Gbit/s. In an all Erbium amplification system, the transmission distance is enhanced by a factor superior than 3 when the 2R regeneration is applied. This performance is obtained for 8 channels and over 13 nm for each channel. For the 3R regeneration set-up, a novel technique of all-optical synchronous modulation using cross saturation absorption in SA is also presented. The all-optical synchronous modulation is driven optically by the recovered clock from a self-pulsating laser device. Thank to this technique, a transmission distance enhancement factor of 22.5 at 42.6 Gbit/s is experimentally obtained