69 research outputs found
Controlling the efficiency of spin injection into graphene by carrier drift
Electrical spin injection from ferromagnetic metals into graphene is hindered
by the impedance mismatch between the two materials. This problem can be
reduced by the introduction of a thin tunnel barrier at the interface. We
present room temperature non-local spin valve measurements in
cobalt/aluminum-oxide/graphene structures with an injection efficiency as high
as 25%, where electrical contact is achieved through relatively transparent
pinholes in the oxide. This value is further enhanced to 43% by applying a DC
current bias on the injector electrodes, that causes carrier drift away from
the contact. A reverse bias reduces the AC spin valve signal to zero or
negative values. We introduce a model that quantitatively predicts the behavior
of the spin accumulation in the graphene under such circumstances, showing a
good agreement with our measurements.Comment: 4 pages, 3 color figure
Electronic spin drift in graphene field effect transistors
We studied the drift of electron spins under an applied DC electric field in
single layer graphene spin valves in a field effect transport geometry at room
temperature. In the metallic conduction regime (
m), for DC fields of about 70 kV/m applied between the spin
injector and spin detector, the spin valve signals are increased/decreased,
depending on the direction of the DC field and the carrier type, by as much as
50%. Sign reversal of the drift effect is observed when switching from
hole to electron conduction. In the vicinity of the Dirac neutrality point the
drift effect is strongly suppressed. The experiments are in quantitative
agreement with a drift-diffusion model of spin transport.Comment: 4 figure
Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions
We report electronic transport measurements of graphene contacted by NbTiN
electrodes, which at low temperature remain superconducting up to at least 11
Tesla. In devices with a single superconducting contact, we find a more than
twofold enhancement of the conductance at zero bias, which we interpret in
terms of reflectionless tunneling. In devices with two superconducting
contacts, we observe the Josephson effect, bipolar supercurrents and Fraunhofer
patterns.Comment: 6 pages, 5 figure
Energy level alignment at Co/AlOx/pentacene interfaces
X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) experiments were performed in order to study the energy level alignment and electronic structure at Co/AlOx/pentacene interfaces as a function of the aluminum oxide (AlOx) tunnel barrier thickness and the oxidation state of Co. XPS was used to determine the oxygen exposure for the optimum oxidation of 6, 8, and 10 A thin layers of Al deposited on Co. The Fermi level (FL) position in the band gap of AlOx depends on the oxidation state of the underlying Co and on the thickness of the tunnel barrier. The energy level alignment at Co/AlOx interfaces is consistent with an interfacial dipole, its magnitude being sensitive to the oxidation of Co, and band bending phenomena in the thin AlOx tunnel barrier. UPS experiments revealed no chemical interaction at Co/AlOx/pentacene interface in contrast with hybridization effects found at Co/pentacene interface. The vacuum level of pentacene aligns with that of AlOx, following the position of AlOx energy levels with respect to FL. The hole injection barrier was found to increase with the thickness of the tunnel barrier and to decrease with the oxidation of Co at a fixed thickness of the AlOx layer
Linear scaling between momentum and spin scattering in graphene
Spin transport in graphene carries the potential of a long spin diffusion
length at room temperature. However, extrinsic relaxation processes limit the
current experimental values to 1-2 um. We present Hanle spin precession
measurements in gated lateral spin valve devices in the low to high (up to
10^13 cm^-2) carrier density range of graphene. A linear scaling between the
spin diffusion length and the diffusion coefficient is observed. We measure
nearly identical spin- and charge diffusion coefficients indicating that
electron-electron interactions are relatively weak and transport is limited by
impurity potential scattering. When extrapolated to the maximum carrier
mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase
in the spin diffusion length should be possible
Electronic spin transport in graphene field effect transistors
Spin transport experiments in graphene, a single layer of carbon atoms,
indicate spin relaxation times that are significantly shorter than the
theoretical predictions. We investigate experimentally whether these short spin
relaxation times are due to extrinsic factors, such as spin relaxation caused
by low impedance contacts, enhanced spin flip processes at the device edges or
the presence of an aluminium oxide layer on top of graphene in some samples.
Lateral spin valve devices using a field effect transistor geometry allowed for
the investigation of the spin relaxation as a function of the charge density,
going continuously from metallic hole to electron conduction (charge densities
of cm) via the Dirac charge neutrality point (). The results are quantitatively described by a one dimensional spin
diffusion model where the spin relaxation via the contacts is taken into
account. Spin valve experiments for various injector/detector separations and
spin precession experiments reveal that the longitudinal (T) and the
transversal (T) relaxation times are similar. The anisotropy of the spin
relaxation times and , when the spins are injected
parallel or perpendicular to the graphene plane, indicates that the effective
spin orbit fields do not lie exclusively in the two dimensional graphene plane.
Furthermore, the proportionality between the spin relaxation time and the
momentum relaxation time indicates that the spin relaxation mechanism is of the
Elliott-Yafet type. For carrier mobilities of 2-5 cm2^/Vs and
for graphene flakes of 0.1-2 m in width, we found spin relaxation times of
the order of 50-200 ps, times which appear not to be determined by the
extrinsic factors mentioned above.Comment: 11 pages, 13 figure
Electronic spin transport and spin precession in single graphene layers at room temperature
The specific band structure of graphene, with its unique valley structure and
Dirac neutrality point separating hole states from electron states has led to
the observation of new electronic transport phenomena such as anomalously
quantized Hall effects, absence of weak localization and the existence of a
minimum conductivity. In addition to dissipative transport also supercurrent
transport has already been observed. It has also been suggested that graphene
might be a promising material for spintronics and related applications, such as
the realization of spin qubits, due to the low intrinsic spin orbit
interaction, as well as the low hyperfine interaction of the electron spins
with the carbon nuclei. As a first step in the direction of graphene
spintronics and spin qubits we report the observation of spin transport, as
well as Larmor spin precession over micrometer long distances using single
graphene layer based field effect transistors. The non-local spin valve
geometry was used, employing four terminal contact geometries with
ferromagnetic cobalt electrodes, which make contact to the graphene sheet
through a thin oxide layer. We observe clear bipolar (changing from positive to
negative sign) spin signals which reflect the magnetization direction of all 4
electrodes, indicating that spin coherence extends underneath all 4 contacts.
No significant changes in the spin signals occur between 4.2K, 77K and room
temperature. From Hanle type spin precession measurements we extract a spin
relaxation length between 1.5 and 2 micron at room temperature, only weakly
dependent on charge density, which is varied from n~0 at the Dirac neutrality
point to n = 3.6 10^16/m^2. The spin polarization of the ferromagnetic contacts
is calculated from the measurements to be around 10%
Anisotropic spin relaxation in graphene
Spin relaxation in graphene is investigated in electrical graphene spin valve
devices in the non-local geometry. Ferromagnetic electrodes with in-plane
magnetizations inject spins parallel to the graphene layer. They are subject to
Hanle spin precession under a magnetic field applied perpendicular to the
graphene layer. Fields above 1.5 T force the magnetization direction of the
ferromagnetic contacts to align to the field, allowing injection of spins
perpendicular to the graphene plane. A comparison of the spin signals at B = 0
and B = 2 T shows a 20 % decrease in spin relaxation time for spins
perpendicular to the graphene layer compared to spins parallel to the layer. We
analyze the results in terms of the different strengths of the spin orbit
effective fields in the in-plane and out-of-plane directions.Comment: 5 pages, 4 figure
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