Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.publishedVersionPeer reviewe