Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to a peak concentration of 1.8 at. %. Upon 458 nm excitation the sample shows a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm. By measuring the excitation spectra of these features as well as the temperature-dependent intensities and luminescence dynamics we conclude that (a) the Er is excited by excitons recombining within Si nanocrystals through a strong coupling mechanism, (b) the Er excitation process at room temperature occurs at a submicrosecond time scale, (c) excitons excite Er with an efficiency >55%, and (d) each nanocrystal can have at most ~1 excited Er ion in its vicinity

Arrival processes in port modeling: insights from a case study

This paper investigates the impact of arrival processes on the ship handling process. Two types of arrival processes are considered: controlled and uncontrolled. Simulation results show that uncontrolled arrivals of ships perform worst in terms of both ship delays and required storage capacity. Stock-controlled arrivals perform best with regard to large vessel delays and storage capacity. The combination of stock-controlled arrivals for large vessels and equidistant arrivals for barges also performs better than the uncontrolled process. Careful allocation of ships to the mooring points of a jetty further improves the efficiency.supply chain management;logistics;simulation;transportation;case study

The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence

Size-dependent electron-hole exchange interaction in Si nanocrystals

Silicon nanocrystals with diameters ranging from [approximate]2 to 5.5 nm were formed by Si ion implantation into SiO2 followed by annealing. After passivation with deuterium, the photoluminescence (PL) spectrum at 12 K peaks at 1.60 eV and has a full width at half maximum of 0.28 eV. The emission is attributed to the recombination of quantum-confined excitons in the nanocrystals. The temperature dependence of the PL intensity and decay rate at several energies between 1.4 and 1.9 eV was determined between 12 and 300 K. The temperature dependence of the radiative decay rate was determined, and is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels due to the electron-hole exchange interaction. The exchange energy splitting increases from 8.4 meV for large nanocrystals ([approximate]5.5 nm) to 16.5 meV for small nanocrystals ([approximate]2 nm). For all nanocrystal sizes, the radiative rate from the singlet state is 300–800 times larger than the radiative rate from the triplet state

Fabrication and characterization of erbium-doped toroidal microcavity lasers

Erbium-doped SiO2 toroidal microcavity lasers are fabricated on a Si substrate using a combination of optical lithography, etching, Er ion implantation, and CO2 laser reflow. Erbium is either preimplanted in the SiO2 base material or postimplanted into a fully fabricated microtoroid. Three-dimensional infrared confocal photoluminescence spectroscopy imaging is used to determine the spatial distribution of optically active Er ions in the two types of microtoroids, and distinct differences are found. Microprobe Rutherford backscattering spectrometry indicates that no macroscopic Er diffusion occurs during the laser reflow for preimplanted microtoroids. From the measured Er doping profiles and calculated optical mode distributions the overlap factor between the Er distribution and mode profile is calculated: Gamma=0.066 and Gamma=0.02 for postimplanted and preimplanted microtoroids, respectively. Single and multimode lasing around 1.5 µm is observed for both types of microtoroids, with the lowest lasing threshold (4.5 µW) observed for the preimplanted microtoroids, which possess the smallest mode volume. When excited in the proper geometry, a clear mode spectrum is observed superimposed on the Er spontaneous emission spectrum. This result indicates the coupling of Er ions to cavity modes

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10

Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2

The photoluminescence decay characteristics of silicon nanocrystals in dense ensembles fabricated by ion implantation into silicon dioxide are observed to vary in proportion to the calculated local density of optical states. A comparison of the experimental 1/e photoluminescence decay rates to the expected spontaneous emission rate modification yields values for the internal quantum efficiency and the intrinsic radiative decay rate of silicon nanocrystals. A photoluminescence quantum efficiency as high as 59%±9% is found for nanocrystals emitting at 750 nm at low excitation power. A power dependent nonradiative decay mechanism reduces the quantum efficiency at high pump intensity

A comparison of graphical design techniques for parallel, distributed software

We have compared three graphical design techniques, OMT, ADL, and PARSE, on their suitability for the development of parallel/distributed applications. Our method has been to use all three of them in modeling one, existing, application: a backup facility running within the Andrew File System. We compare and analyze the outcomes on a number of important design aspects. Based on this, we draw conclusions on each individual technique and on graphical design techniques for parallel/distributed software in general

Other People’s Money: Money’s Perceived Purchasing Power Is Smaller for Others Than for the Self

Nine studies find that people believe their money has greater purchasing power than the same quantity of others’ money. Using a variety of products from socks to clocks to chocolates, we found that participants thought the same amount of money could buy more when it belonged to themselves versus others – a pattern that extended to undesirable products. Participants also believed their money – in the form of donations, taxes, fines, and fees – would help charities/governments more than others’ money. We tested six mechanisms based on psychological distance, the endowment effect, wishful thinking, better-than-average biases, pain-of-payment, and beliefs about product preferences. Only a psychological distance mechanism received support. Specifically, we found that the perceived purchasing power of other people’s money decreased logarithmically as others’ psychological distance from the self increased, consistent with psychological distance’s subadditive property. Further supporting a psychological distance mechanism, we found that framing one’s own money as distant (vs. near) reduced the self-other difference in perceived purchasing power. Our results suggest that beliefs about the value of money depend on who owns it, and we discuss implications for marketing, management, psychology, and economics