The Concept of Two Mobilities in Homoepitaxial Growth

A general kinetic concept is introduced which can be used to control growth modes in homoepitaxy. Its basic idea is that during growth of a layer, the characteristics length scale associated with nucleation is deliberately varied. The power of this concept lies in the fact that it can be realized experimentally in a variety of ways and is not restricted to special systems. It helps to understand various effects reported in the literature and may serve as a guideline for future methods of growth manipulation

Optical anisotropy induced by ion bombardment of Ag(001)

Grazing incidence ion bombardment results in the formation of nanoripples that induce an anisotropic optical reflection The evolution of the reflectance anisotropy has been monitored in situ with reflectance anisotropy spectroscopy. The Rayleigh-Rice theory (RRT) has been used to analyze the optical spectra quantitatively and provides the evolution of the average ripple period and root-mean-squared surface roughness. After an incipient phase, both the increase in the periodicity and the roughness vary roughly with the square root of the sputter time. Additional high-resolution low-energy electron diffraction (HR-LEED) measurements have been performed to characterize details of the average structure created by ion bombardment

Hydrogen adsorption configurations on Ge(001) probed with STM

The adsorption of hydrogen on Ge(001) has been studied with scanning tunneling microscopy at 77 K. For low doses (100 L) a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled antiparallel or parallel to the neighboring Ge-Ge dimers. The latter configuration has recently been predicted by M. W. Radny et al. [J. Chem. Phys. 128, 244707 (2008)], but not observed experimentally yet. Due to the presence of phasons some dimer rows appear highly dynamic

Direct determination of the step-edge formation energies of the energetically stable and unstable double-layer step edges of Si(001)

Scanning tunneling microscopy images of 4.5° misoriented double B stepped Si(001) have been analyzed to determine the double-layer step-edge formation energies of the energetically stable double step (B-type) as well as the energetically unstable double step (A-type). The ordering of the various single- and double-layer step-edge formation energies is in accordance with semiempirical tight-binding-based total-energy calculations performed by Chadi [Phys. Rev. Lett. 59, 1691 (1987)]. Finally, the miscut angle at which the transition between the single- and double-layer stepped surface occurs as calculated using the experimentally obtained step-edge formation energies is in agreement with the experiment

He Scattering from Compact Clusters and from Diffusion-Limited Aggregates on Surfaces: Observable Signatures of Structure

The angular intensity distribution of He beams scattered from compact clusters and from diffusion limited aggregates, epitaxially grown on metal surfaces, is investigated theoretically. The purpose is twofold: to distinguish compact cluster structures from diffusion limited aggregates, and to find observable {\em signatures} that can characterize the compact clusters at the atomic level of detail. To simplify the collision dynamics, the study is carried out in the framework of the sudden approximation, which assumes that momentum changes perpendicular to the surface are large compared with momentum transfer due to surface corrugation. The diffusion limited aggregates on which the scattering calculations were done, were generated by kinetic Monte Carlo simulations. It is demonstrated, by focusing on the example of compact Pt Heptamers, that signatures of structure of compact clusters may indeed be extracted from the scattering distribution. These signatures enable both an experimental distinction between diffusion limited aggregates and compact clusters, and a determination of the cluster structure. The characteristics comprising the signatures are, to varying degrees, the Rainbow, Fraunhofer, specular and constructive interference peaks, all seen in the intensity distribution. It is also shown, how the distribution of adsorbate heights above the metal surface can be obtained by an analysis of the specular peak attenuation. The results contribute to establishing He scattering as a powerful tool in the investigation of surface disorder and epitaxial growth on surfaces, alongside with STM.Comment: 41 pages, 16 postscript figures. For more details see http://www.fh.huji.ac.il/~dan

Erratum: (2x1)-(1x1) Phase Transition on Ge(001): Dimer Breakup and Surface Roughening [Phys. Rev. Lett. 91, 116102 (2003)]

Using low energy electron microscopy, we have investigated the (2×1)-(1×1) phase transition occurring above 925 K on Ge(001). Dimer breakup has been identified as the physical origin of this transition. A quantitative description of the dimer concentration during the transition involves configuration entropy of random monomers within the dimer matrix. The dimer formation energy amounts to 1.2±0.3  eV. Dimer breakup promotes reversible surface disorder by step proliferation and irreversible surface roughening above 1130 K

Thermal roughening of {001} surfaces

Within the framework of a solid-on-solid model that incorporates nearest- (epsilon) and next-nearest-neighbor (delta) interactions we have determined the free energy of the high-symmetry steps on a (001) surface of a cubic crystal. We have found a simple expression that allows one to determine the thermal roughening temperature TR of a (001) surface (2e¿(epsilon/2+delta)/kbTR¿e¿(epsilon+2delta)/kbTR+2e¿(epsilon+delta)/kbTR=1). In a more refined analysis we have explicitly included step-edge overhangs. This results in a slightly lower thermal roughening temperature. Our results are also applicable to the two-dimensional Ising spin system

Helium Ion Microscopy

Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.Comment: Revised versio

Quantum Size Effect Driven Structure Modifications of Bi Films on Ni(111)\ud

The quantum-size effect (QSE) driven growth of Bi film structures on Ni(111) was studied in situ using low energy electron microscopy and selective area low energy electron diffraction (μLEED). Domains with a (3×3), [3/1 -1/2], and (7×7) film structure are found with a height of 3, 5, and 7 atomic layers, respectively. A comparison of I/V-μLEED curves with tensor LEED calculations shows perfectly accommodated Fermi wavelengths, indicative that not only the quantized height, but also the film structure is driven by QSE.\ud \u