305 research outputs found
Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
We report on fabrication and characterization of the organic field effect
transistors (OFETs) on the surface of single crystals of rubrene. The parylene
polymer film has been used as the gate insulator. At room temperature, these
OFETs exhibit the p-type conductivity with the field effect mobility up to 1
cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility
is discussed.Comment: 3 page
Organic Single-Crystal Field-Effect Transistors
We present an overview of recent studies of the charge transport in the field
effect transistors on the surface of single crystals of organic
low-molecular-weight materials. We first discuss in detail the technological
progress that has made these investigations possible. Particular attention is
devoted to the growth and characterization of single crystals of organic
materials and to different techniques that have been developed for device
fabrication. We then concentrate on the measurements of the electrical
characteristics. In most cases, these characteristics are highly reproducible
and demonstrate the quality of the single crystal transistors. Particularly
noticeable are the small sub-threshold slope, the non-monotonic temperature
dependence of the mobility, and its weak dependence on the gate voltage. In the
best rubrene transistors, room-temperature values of as high as 15
cm/Vs have been observed. This represents an order-of-magnitude increase
with respect to the highest mobility previously reported for organic thin film
transistors. In addition, the highest-quality single-crystal devices exhibit a
significant anisotropy of the conduction properties with respect to the
crystallographic direction. These observations indicate that the field effect
transistors fabricated on single crystals are suitable for the study of the
\textit{intrinsic} electronic properties of organic molecular semiconductors.
We conclude by indicating some directions in which near-future work should
focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on
organic semiconductor
Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites
By using the dark-field real-space imaging technique of transmission electron
microscopy (TEM), we have observed slow 200 A-scale fluctuations of
charge-ordered (CO) phase in mixed-valent manganites under a strong electron
beam irradiation. In addition to these unusual fluctuations of the CO phase, we
observed the switching-type fluctuations of electrical resistivity in the same
sample, which were found to be as large as several percents. Systematic
analysis indicates that these two different types of fluctuations with a
similar time scale of the order of seconds are interconnected through a
meta-stable insulating charge-disordered state. Current dependence of the
fluctuations suggests a non-equilibrium nature of this slow dynamics.Comment: To appear in Europhysics Letter
Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs
We report on the fabrication and characterization of single-crystal organic
p-type field-effect transistors (OFETs) with the field-effect hole mobility mu
\~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The
single-crystal devices compare favorably with thin-film OFETs not only in this
respect: the mobility for the single-crystal devices is nearly independent of
the gate voltage and the field effect onset is very sharp. Subthreshold slope
as small as S = 0.85 V/decade has been observed for a gate insulator
capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic
subthreshold slope Si = SCi at least one order of magnitude smaller than that
for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H)
devices
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