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Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure
Single-crystal
antimonene flakes are observed on sapphire substrates
after the postgrowth annealing procedure of amorphous antimony (Sb)
droplets prepared by using molecular beam epitaxy at room temperature.
The large wetting angles of the antimonene flakes to the sapphire
substrate suggest that an alternate substrate should be adopted to
obtain a continuous antimonene film. By using a bilayer MoS<sub>2</sub>/sapphire sample as the new substrate, a continuous and single-crystal
antimonene film is obtained at a low growth temperature of 200 °C.
The results are consistent with the theoretical prediction of the
lower interface energy between antimonene and MoS<sub>2</sub>. The
different interface energies of antimonene between sapphire and MoS<sub>2</sub> surfaces lead to the selective growth of antimonene only
atop MoS<sub>2</sub> surfaces on a prepatterned MoS<sub>2</sub>/sapphire
substrate. With similar sheet resistance to graphene, it is possible
to use antimonene as the contact metal of 2D material devices. Compared
with Au/Ti electrodes, a specific contact resistance reduction up
to 3 orders of magnitude is observed by using the multilayer antimonene
as the contact metal to MoS<sub>2</sub>. The lower contact resistance,
the lower growth temperature, and the preferential growth to other
2D materials have made antimonene a promising candidate as the contact
metal for 2D material devices