24 research outputs found
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Development, characterization, and applications of high temperature superconductor nanobridge Josephson junctions
A well-controlled, high-yield Josephson junction process in high temperature superconductors (HTS) is necessary for the demonstration of ultra-high-speed devices and circuits which exceed the capabilities of conventional electronics. The authors developed nanobridge Josephson junctions in high quality thin-film YBaCuO with dimensions below 100 nm fabricated using electron-beam nanolithography. They characterized this Josephson junction technology for process yield, junction parameter uniformity, and overall applicability for use in high-performance circuits. To facilitate the determination of junction parameters, they developed a measurement technique based on spectral analysis in the range of 90--160 GHz of phase-locked, oscillating arrays of up to 2,450 Josephson junctions. Because of the excellent yield and uniformity of the nanobridge junctions, they successfully applied the junction technology to a wide variety of circuits. These circuits included transmission-line pulse formers and 32 and 64-bit shift registers. The 32-bit shift register was shown to operate at clock speeds near 100 GHz and is believed to be one of the faster and more complex digital circuit demonstrated to date using high temperature superconductor technology
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GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects
We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction
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Ultra-high-speed optical and electronic distributed devices
This report summarizes work on the development of ultra-high-speed semiconductor optical and electronic devices. High-speed operation is achieved by velocity matching the input stimulus to the output signal along the device`s length. Electronic devices such as field-effect transistors (FET`s), should experience significant speed increases by velocity matching the electrical input and output signals along the device. Likewise, optical devices, which are typically large, can obtain significant bandwidths by velocity matching the light being generated, detected or modulated with the electrical signal on the device`s electrodes. The devices discussed in this report utilize truly distributed electrical design based on slow-wave propagation to achieve velocity matching