5 research outputs found
Electron transport properties of sub-3-nm diameter copper nanowires
Density functional theory and density functional tight-binding are applied to
model electron transport in copper nanowires of approximately 1 nm and 3 nm
diameters with varying crystal orientation and surface termination. The copper
nanowires studied are found to be metallic irrespective of diameter, crystal
orientation and/or surface termination. Electron transmission is highly
dependent on crystal orientation and surface termination. Nanowires oriented
along the [110] crystallographic axis consistently exhibit the highest electron
transmission while surface oxidized nanowires show significantly reduced
electron transmission compared to unterminated nanowires. Transmission per unit
area is calculated in each case, for a given crystal orientation we find that
this value decreases with diameter for unterminated nanowires but is largely
unaffected by diameter in surface oxidized nanowires for the size regime
considered. Transmission pathway plots show that transmission is larger at the
surface of unterminated nanowires than inside the nanowire and that
transmission at the nanowire surface is significantly reduced by surface
oxidation. Finally, we present a simple model which explains the transport per
unit area dependence on diameter based on transmission pathways results
Connecting Single Molecule Electrical Measurements to Ensemble Spectroscopic Properties for Quantification of Single-Walled Carbon Nanotube Separation
We directly compared ensemble spectroscopic measurements to a statistically rigorous single molecule electrical characterization of individual SWNT devices using a high throughput electrical probe station and reported, for the first time, a highly accurate extinction coefficient ratio for metallic to semiconducting SWNTs of 0.352 +/- 0.009. The systematic counting of metallic and semiconducting types from solution also allows us to examine the variances associated with device properties and therefore provide the first measure of potential defect generation during processing methodsclose242
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Abstract As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies