28 research outputs found
Efficiency Models for GaN-based Light-Emitting Diodes: Status and Challenges
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been
revolutionizing various applications in lighting, displays, medical equipment,
and other fields. However, their energy efficiency is still below expectations
in many cases. An unprecedented diversity of theoretical models has been
developed for efficiency analysis and GaN-LED design optimization. This review
paper provides an overview of the modeling landscape and pays special attention
to the influence of III-nitride material properties. It thereby identifies some
key challenges and directions for future improvements.Comment: submitted to MDPI Material
Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
The threshold current density of narrow (1.5 {\mu}m) ridge-waveguide InGaN
multi-quantum-well laser diodes, as well as the shape of their lateral
far-field patterns, strongly depend on the etch depth of the ridge waveguide.
Both effects can be attributed to strong index-antiguiding. A value of the
antiguiding factor R = 10 is experimentally determined near threshold by
measurements of the current-dependent gain and refractive index spectra. The
device performances are simulated self-consistently solving the
Schr\"odinger-Poisson equations and the equations for charge transport and
waveguiding. Assuming a carrier-induced index change which matches the
experimentally determined antiguiding factor, both the measured high threshold
current and the shape of the far-field pattern of lasers with shallow ridges
can be reproduced theoretically.Comment: This is an author-created, un-copyedited version of an article
accepted for publication in the IEEE Journal of Quantum Electronics. IEEE is
not responsible for any errors or omissions in this version of the manuscript
or any version derived from i
Optoelectronic Devices: Advanced Simulation and Analysis
Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested reader is quickly able to perform similar simulations
Handbook of Optoelectronic Device Modeling and Simulation
Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This handbook shows how we can probe the underlying and highly complex physical processes using modern mathematical models and numerical simulation for optoelectronic device design, analysis, and performance optimization. It reflects the wide availability of powerful computers and advanced commercial software, which have opened the door for non-specialists to perform sophisticated modeling and simulation tasks. The chapters comprise the know-how of more than a hundred experts from all over the world. The handbook is an ideal starting point for beginners but also gives experienced researchers the opportunity to renew and broaden their knowledge in this expanding field
Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 μm wavelength
Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system