Magnetic-field-induced Stoner transition in a dilute quantum Hall system

In a recent paper [Phys.Rev.B.\textbf{84}, 161307 (2011)], experimental data on spin splitting in the integer quantum Hall effect has been reported in a high mobility dilute 2D electron gas with electron density as low as 0.2 $\times$ 10$^{11}$ cm $^{-2}$. In this work, we show that an excellent \emph{quantitative} description of these data can be obtained within the model of the magnetic-field-induced Stoner transition in the quantum Hall regime. This provides a powerful tool to probe the non-trivial density dependance of electron-electron interactions in the dilute regime of the 2D electron gas

Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron density is reduced, consistent with recent theories taking into account the enhancement of the electron-electron interactions at low densities. Nevertheless, the magnetic field for complete polarization, Bp, remains 2-3 times smaller than predicted for a disorder free system. We show, in particular by studying the temperature dependance of Bp to probe the effective size of the Fermi sea, that localization plays an important role in determining the spin polarization of a 2D electron gas.Comment: Published in the Physical Review

Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene

We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition

Using the de Haas-van Alphen effect to map out the closed three-dimensional Fermi surface of natural graphite

The Fermi surface of graphite has been mapped out using de Haas van Alphen (dHvA) measurements at low temperature with in-situ rotation. For tilt angles $\theta>60^{\circ}$ between the magnetic field and the c-axis, the majority electron and hole dHvA periods no longer follow the $\cos(\theta)$ behavior demonstrating that graphite has a 3 dimensional closed Fermi surface. The Fermi surface of graphite is accurately described by highly elongated ellipsoids. A comparison with the calculated Fermi surface suggests that the SWM trigonal warping parameter $\gamma_3$ is significantly larger than previously thought

Current-induced nuclear-spin activation in a two-dimensional electron gas

Electrically detected nuclear magnetic resonance was studied in detail in a two-dimensional electron gas as a function of current bias and temperature. We show that applying a relatively modest dc-current bias, I_dc ~ 0.5 microAmps, can induce a re-entrant and even enhanced nuclear spin signal compared with the signal obtained under similar thermal equilibrium conditions at zero current bias. Our observations suggest that dynamic nuclear spin polarization by small current flow is possible in a two-dimensional electron gas, allowing for easy manipulation of the nuclear spin by simple switching of a dc current.Comment: 5 pages, 3 fig

A Single-pass Cr:ZnSe Amplifier for Broadband Infared Undulator Radiation

An amplifier based on a highly-doped Chromium Zinc-Selenide (Cr:ZnSe) crystal is proposed to increase the pulse energy emitted by an electron bunch after it passes through an undulator magnet. The primary motivation is a possible use of the amplified undulator radiation emitted by a beam circulating in a particle accelerator storage ring to increase the particle beam's phase-space density---a technique dubbed Optical Stochastic Cooling (OSC). This paper uses a simple four energy level model to estimate the single-pass gain of Cr:ZnSe and presents numerical calculations combined with wave-optics simulations of undulator radiation to estimate the expected properties of the amplified undulator wave-packet

The hole Fermi surface in Bi2_{2}Se3_{3} probed by quantum oscillations

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^\circ$ and $90^\circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.Comment: A supplemental material file giving a more detailed description of our work is available upon reques

Fractional quantum Hall effect in CdTe

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.Comment: Submitte