Bronchopulmonary Dysplasia

Hospitalizations for respiratory syncytial virus bronchioliti

Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms

We have studied plasmon-longitudinal optical (LO) phonon coupled modes by means of Raman scattering in n-type InN layers grown by metalorganic vapor phase epitaxy, for carrier densities in the range of 10(19) cm(-3). A strong mode is observed near the frequency of the A(1)(LO) phonon, despite the high conductivity of the films. It is suggested that the main origin which can be invoked for an effective decoupling of the LO phonon from the plasmon is the participation to the scattering of phonons with wave vectors larger than the Thomas-Fermi wave vector. The line shape of the LO mode is calculated using the Lindhard-Mermin dielectric function taking into account finite wave-vectors, for various light scattering processes. We find that the charge density fluctuations mechanism is involved as the main scattering mechanism in n-type InN, at least for the investigated excitation energies in the 2.54-1.89 eV range. The breakdown of the wave-vector conservation is assigned to electron elastic scattering by impurities

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of similar to 95% together with a flat stopband of 30 nm width. The cavity mode centered around 390 nm is characterized by a full width at half maximum of 4 nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects. (c) 2008 American Institute of Physics

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of similar to 95% together with a flat stopband of 30 nm width. The cavity mode centered around 390 nm is characterized by a full width at half maximum of 4 nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects. (c) 2008 American Institute of Physics

Inhibition of THC-induced effects on the central nervous system and heart rate by a novel CB1 receptor antagonist AVE1625

CB1 antagonists such as AVE1625 are potentially useful in the treatment of obesity, smoking cessation and cognitive impairment. Proof of pharmacological action of AVE1625 in the brain can be given by antagonising the effects of delta-9-tetrahydrocannabinol (THC), a CB1/CB2 agonist. Inhibition of THC-induced effects by AVE1625 was observed on Visual Analogue Scales 'alertness', 'feeling high', 'external perception', 'body sway' and 'heart rate'. Even the lowest dose of AVE1625 20 mg inhibited most of THC-induced effects. AVE1625 did not have any effect on psychological and behavioural parameters or heart rate by itself. After THC and AVE1625 administration, changes on electroencephalography were observed. This study shows a useful method for studying the effects of CB1 antagonists. AVE1625 penetrates the brain and antagonises THC-induced effects with doses at or above 20 mg.Stress-related psychiatric disorders across the life spa