Development of a detector-compatible JFET technology on high-resistivity silicon

NUCL. INSTR. AND METH.

Feasibility study for double-sided silicon microstrip detector fabrication at IRST

NUCL. INSTR. AND METH.

A fabrication process for silicon microstrip detectors with integrated front-end electronics

We report on an research and development activity aimed at the fabrication of silicon microstrip detectors with integrated front-end electronics to be used in high-energy physics and space experiments and medical/industrial imaging applications. A specially tailored fabrication technology has been developed at ITC-IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel junction field effect transistors and N- or P-channel MOS transistors. The main characteristics of the fabrication process are outlined. Experimental results from the electrical characterization of the devices are reported, showing that transistors with good electrical figures can be obtained within the proposed technology while preserving the basic detector parameters

Development of a low-power thick-film gas sensor deposited by screen-printing technique onto a micromachined hotplate

We report on the design, implementation and characterisation of a thick-film gas sensor deposited for the first time by screen-printing technique onto a micromachined hotplate, the microheater maintains a film temperature as high as 400°C with <30 mW of input power. The microheater consists of a dielectric stacked membrane equipped with embedded polysilicon resistors acting as heating element as well as temperature sensing elements. Extensive finite-element computer simulations were carried out during the design step to optimise the radial temperature gradient up to 1200°C/mm. A newly developed scheme for temperature measurement was adopted for on-line adjustment of the film temperature through aconventional low-power proportional integral (PI) regulator. Deposition of sensing layers based on semiconductor oxides, such as SnO2 was achieved by computer-aided screen-printing. The films were then fired through the microheater itself to guarantee thermodynamic stability for long time exploitation. The response of the device to CO, CH4 and NO2 at concentrations typical for indoor and outdoor applications was recorded by measuring the film resistance through ultra high impedance CMOS circuit

Feasibility studies of microelectrode silicon detectors with integrated electronics

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications, We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced. (C) 2002 Elsevier Science B.V. All rights reserved