A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions

We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also interact strongly with the random positively ionized impurities. At the insulating side the electrons are all bound in pairs to the ions. On the metallic side free electrons exist which are scattered by ions dressed with electron-pairs and therefore alter the bare scattering potential of the ions. The physics at the metallic side of the transition is argued to be controlled by the classical to quantum transport cross-over leading to the observed non-monotonous dependence of the resistivity on temperature. This few electrons per ion scenario appears to be an experimentally realistic and testable scenario, which can also serve as a starting point for further theoretical analysis of the two-dimensional metal-insulator transition.Comment: 8 pages, revised version, minor change

Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.Comment: Presented at SIMD, Dec. 1999 in Hawaii. To be published in Superlattices and Microstructures, May 2000 issu

Functional equations from generating functions: a novel approach to deriving identities for the Bernstein basis functions

The main aim of this paper is to provide a novel approach to deriving identities for the Bernstein polynomials using functional equations. We derive various functional equations and differential equations using generating functions. Applying these equations, we give new proofs for some standard identities for the Bernstein basis functions, including formulas for sums, alternating sums, recursion, subdivision, degree raising, differentiation and a formula for the monomials in terms of the Bernstein basis functions. We also derive many new identities for the Bernstein basis functions based on this approach. Moreover, by applying the Laplace transform to the generating functions for the Bernstein basis functions, we obtain some interesting series representations for the Bernstein basis functions.Comment: 1

Quantum Criticality at the Metal Insulator Transition

We introduce a new method to analysis the many-body problem with disorder. The method is an extension of the real space renormalization group based on the operator product expansion. We consider the problem in the presence of interaction, large elastic mean free path, and finite temperatures. As a result scaling is stopped either by temperature or the length scale set by the diverging many-body length scale (superconductivity). Due to disorder a superconducting instability might take place at $T_{SC}\to 0$ giving rise to a metallic phase or $T>T_{SC}$. For repulsive interactions at $T\to 0$ we flow towards the localized phase which is analized within the diffusive Finkelstein theory. For finite temperatures with strong repulsive backward interactions and non-spherical Fermi surfaces characterized by $|\frac{d\ln N(b)}{\ln b}|\ll 1$ one finds a fixed point $(D^*,\Gamma^*_2)$ in the plane $(D,\Gamma_2^{(s)})$. ($D\propto(K_F\ell)^{-1}$ is the disorder coupling constant, $\Gamma_2^{(s)}$ is the particle-hole triplet interaction, $b$ is the length scale and $N(b)$ is the number of channels.) For weak disorder, $D<D^*$, one obtains a metallic behavior with the resistance $\rho(D,\Gamma_2^{(s)},T)=\rho(D,\Gamma_2^{(s)},T)\simeq \rho^*f(\frac{D-D^*}{D^*}\frac{1}{T^{z\nu_1}})$ ($\rho^*=\rho(D^*,\Gamma_2^*,1)$, $z=1$, and $\nu_1>1$) in good agreement with the experiments.Comment: 35 pages, Revte

Entropic Tension in Crowded Membranes

Unlike their model membrane counterparts, biological membranes are richly decorated with a heterogeneous assembly of membrane proteins. These proteins are so tightly packed that their excluded area interactions can alter the free energy landscape controlling the conformational transitions suffered by such proteins. For membrane channels, this effect can alter the critical membrane tension at which they undergo a transition from a closed to an open state, and therefore influence protein function \emph{in vivo}. Despite their obvious importance, crowding phenomena in membranes are much less well studied than in the cytoplasm. Using statistical mechanics results for hard disk liquids, we show that crowding induces an entropic tension in the membrane, which influences transitions that alter the projected area and circumference of a membrane protein. As a specific case study in this effect, we consider the impact of crowding on the gating properties of bacterial mechanosensitive membrane channels, which are thought to confer osmoprotection when these cells are subjected to osmotic shock. We find that crowding can alter the gating energies by more than $2\;k_BT$ in physiological conditions, a substantial fraction of the total gating energies in some cases. Given the ubiquity of membrane crowding, the nonspecific nature of excluded volume interactions, and the fact that the function of many membrane proteins involve significant conformational changes, this specific case study highlights a general aspect in the function of membrane proteins.Comment: 20 pages (inclduing supporting information), 4 figures, to appear in PLoS Comp. Bio

The US stock market leads the Federal funds rate and Treasury bond yields

Using a recently introduced method to quantify the time varying lead-lag dependencies between pairs of economic time series (the thermal optimal path method), we test two fundamental tenets of the theory of fixed income: (i) the stock market variations and the yield changes should be anti-correlated; (ii) the change in central bank rates, as a proxy of the monetary policy of the central bank, should be a predictor of the future stock market direction. Using both monthly and weekly data, we found very similar lead-lag dependence between the S&P500 stock market index and the yields of bonds inside two groups: bond yields of short-term maturities (Federal funds rate (FFR), 3M, 6M, 1Y, 2Y, and 3Y) and bond yields of long-term maturities (5Y, 7Y, 10Y, and 20Y). In all cases, we observe the opposite of (i) and (ii). First, the stock market and yields move in the same direction. Second, the stock market leads the yields, including and especially the FFR. Moreover, we find that the short-term yields in the first group lead the long-term yields in the second group before the financial crisis that started mid-2007 and the inverse relationship holds afterwards. These results suggest that the Federal Reserve is increasingly mindful of the stock market behavior, seen at key to the recovery and health of the economy. Long-term investors seem also to have been more reactive and mindful of the signals provided by the financial stock markets than the Federal Reserve itself after the start of the financial crisis. The lead of the S&P500 stock market index over the bond yields of all maturities is confirmed by the traditional lagged cross-correlation analysis.Comment: 12 pages, 7 figures, 1 tabl

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density

Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions

In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance is seen in B=0, suggesting that the anomalous behavior in zero field is observed only when the system is in a degenerate (quantum) state. The temperature dependence of the resistance is found to be qualitatively similar in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure

Metal-Insulator Transition of Disordered Interacting Electrons

We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis of the stability of the metallic state reveals a transition to the insulating state in two-dimensions.Comment: 11 pages, REVTEX, 1 figure included; Final versio

Universal scaling, beta function, and metal-insulator transitions

We demonstrate a universal scaling form of longitudinal resistance in the quantum critical region of metal-insulator transitions, based on numerical results of three-dimensional Anderson transitions (with and without magnetic field), two-dimensional quantum Hall plateau to insulator transition, as well as experimental data of the recently discovered two-dimensional metal-insulator transition. The associated reflection symmetry and a peculiar logarithmic form of the beta function exist over a wide range in which the resistance can change by more than one order of magnitude. Interesting implications for the two-dimensional metal-insulator transition are discussed.Comment: 4 pages, REVTEX, 4 embedded figures; minor corrections to figures and tex