At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

At-wavelength interferometric characterization of a new 4x-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wavefront characterization, we also present wavefront measurements performed with lateral shearing interferometry, the chromatic dependence of the wavefront error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry

Adding static printing capabilities to the EUV phase-shifting point diffraction interferometer

Black and white 8x10 acetate negativehttps://digitalmaine.com/arc_george_french_photos_cf/1458/thumbnail.jp

Adding static printing capabilities to the EUV phase-shifting point diffraction interferometer

While interferometry is routinely used for the characterization and alignment of lithographic optics, the ultimate performance metric for these optics is printing in photoresist. Direct comparison of imaging and wavefront performance is also useful for verifying and improving the predictive power of wavefront metrology under actual printing conditions. To address these issues, static, small-field printing capabilities are being added to the extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) implemented at the Advanced Light Source at Lawrence Berkeley National Laboratory. This Sub-field Exposure Station (SES) will enable the earliest possible imaging characterization of the upcoming Engineering Test Stand (ETS) Set-2 projection optics. Relevant printing studies with the ETS projection optics require illumination partial coherence with {sigma} of approximately 0.7. This {sigma} value is very different from the coherent illumination requirements of the EUV PS/PDI and the coherence properties naturally provided by synchrotron undulator beamline illumination. Adding printing capabilities to the PS/PDI experimental system thus necessitates the development of an alternative illumination system capable of destroying the inherent coherence of the beamline. The SES is being implemented with two independent illuminators: the first is based on a novel EUV diffuser currently under development and the second is based on a scanning mirror design. Here we describe the design and implementation of the new SES, including a discussion of the illuminators and the fabrication of the EUV diffuser

At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

At-wavelength interferometric characterization of a new 4x-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wavefront characterization, we also present wavefront measurements performed with lateral shearing interferometry, the chromatic dependence of the wavefront error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry

System integration and performance of the EUV engineering test stand

The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k{sub 1} of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for full-field images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features